Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry

doi:10.1088/1674-1056/23/8/088502

中国物理B ›› 2014, Vol. 23 ›› Issue (8): 88502-088502.doi: 10.1088/1674-1056/23/8/088502

• SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 • 上一篇下一篇

Chemical mechanical planarization of Ge₂Sb₂Te₅ using IC1010 and Politex reg pads in acidic slurry

何敖东^{a b}, 刘波^a, 宋志棠^a, 王良咏^a, 刘卫丽^a, 冯高明^c, 封松林^a

a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b University of Chinese Academy of Sciences, Beijing 100049, China;
c Semiconductor Manufacturing International Corporation, 18 Zhangjiang Road, Pudong, Shanghai 201203, China

收稿日期:2013-09-04 修回日期:2014-04-08 出版日期:2014-08-15 发布日期:2014-08-15
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2013CBA01900, 2011CBA00607, and 2011CB9328004), the "Strategic Priority Research Program" of the Chinese Academy of Sciences (Grant No. XDA09020402), the Fund from the Science and Technology Council of Shanghai, China (Grant No. 13DZ2295700), the Science Fund from the Chinese Academy of Sciences (Grant No. 20110490761), and the National Natural Science Foundation of China (Grant Nos. 61076121, 61176122, and 61106001).

Chemical mechanical planarization of Ge₂Sb₂Te₅ using IC1010 and Politex reg pads in acidic slurry

He Ao-Dong (何敖东)^{a b}, Liu Bo (刘波)^a, Song Zhi-Tang (宋志棠)^a, Wang Liang-Yong (王良咏)^a, Liu Wei-Li (刘卫丽)^a, Feng Gao-Ming (冯高明)^c, Feng Song-Lin (封松林)^a

a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b University of Chinese Academy of Sciences, Beijing 100049, China;
c Semiconductor Manufacturing International Corporation, 18 Zhangjiang Road, Pudong, Shanghai 201203, China

Received:2013-09-04 Revised:2014-04-08 Online:2014-08-15 Published:2014-08-15
Contact: Liu Bo E-mail:liubo@mail.sim.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2013CBA01900, 2011CBA00607, and 2011CB9328004), the "Strategic Priority Research Program" of the Chinese Academy of Sciences (Grant No. XDA09020402), the Fund from the Science and Technology Council of Shanghai, China (Grant No. 13DZ2295700), the Science Fund from the Chinese Academy of Sciences (Grant No. 20110490761), and the National Natural Science Foundation of China (Grant Nos. 61076121, 61176122, and 61106001).

摘要/Abstract

摘要： In the paper, chemical mechanical planarization (CMP) of Ge₂Sb₂Te₅(GST) is investigated using IC1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate (RR) of GST increases with the increase of pressure for both pads, but the RR of GST polished using IC1010 is far more than that of Politex reg. To check the surface defects, GST film is observed with an optical microscope (OM) and scanning electron microscope (SEM). For the CMP with Politex reg, many spots are observed on the surface of the blank wafer with OM, but no obvious spots are observed with SEM. With regard to the patterned wafer, a few stains are observed on the GST cell, but many residues are found on other area with OM. However, from SEM results, a few residues are observed on the GST cell, more dielectric loss is revealed about the trench structure. For the CMP with IC1010, the surface of the polished blank wafer suffers serious scratches found with both OM and SEM, which may result from a low hardness of GST, compared with those of IC1010 and abrasives. With regard to the patterned wafer, it can achieve a clean surface and almost no scratches are observed with OM, which may result from the high-hardness SiO₂ film on the surface, not from the soft GST film across the whole wafer. From the SEM results, a clean interface and no residues are observed on the GST surface, and less dielectric loss is revealed. Compared with Politex reg, the patterned wafer can achieve a good performance after CMP using IC1010.

关键词: Ge₂Sb₂Te₅, CMP, polishing pad

Abstract: In the paper, chemical mechanical planarization (CMP) of Ge₂Sb₂Te₅(GST) is investigated using IC1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate (RR) of GST increases with the increase of pressure for both pads, but the RR of GST polished using IC1010 is far more than that of Politex reg. To check the surface defects, GST film is observed with an optical microscope (OM) and scanning electron microscope (SEM). For the CMP with Politex reg, many spots are observed on the surface of the blank wafer with OM, but no obvious spots are observed with SEM. With regard to the patterned wafer, a few stains are observed on the GST cell, but many residues are found on other area with OM. However, from SEM results, a few residues are observed on the GST cell, more dielectric loss is revealed about the trench structure. For the CMP with IC1010, the surface of the polished blank wafer suffers serious scratches found with both OM and SEM, which may result from a low hardness of GST, compared with those of IC1010 and abrasives. With regard to the patterned wafer, it can achieve a clean surface and almost no scratches are observed with OM, which may result from the high-hardness SiO₂ film on the surface, not from the soft GST film across the whole wafer. From the SEM results, a clean interface and no residues are observed on the GST surface, and less dielectric loss is revealed. Compared with Politex reg, the patterned wafer can achieve a good performance after CMP using IC1010.

Key words: Ge₂Sb₂Te₅, CMP, polishing pad

中图分类号: (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)

85.40.-e

81.65.-b (Surface treatments) 52.77.Bn (Etching and cleaning) 81.65.Cf (Surface cleaning, etching, patterning)

何敖东, 刘波, 宋志棠, 王良咏, 刘卫丽, 冯高明, 封松林. Chemical mechanical planarization of Ge₂Sb₂Te₅ using IC1010 and Politex reg pads in acidic slurry[J]. 中国物理B, 2014, 23(8): 88502-088502.

He Ao-Dong (何敖东), Liu Bo (刘波), Song Zhi-Tang (宋志棠), Wang Liang-Yong (王良咏), Liu Wei-Li (刘卫丽), Feng Gao-Ming (冯高明), Feng Song-Lin (封松林). Chemical mechanical planarization of Ge₂Sb₂Te₅ using IC1010 and Politex reg pads in acidic slurry[J]. Chin. Phys. B, 2014, 23(8): 88502-088502.

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Chemical mechanical planarization of Ge₂Sb₂Te₅ using IC1010 and Politex reg pads in acidic slurry

Chemical mechanical planarization of Ge₂Sb₂Te₅ using IC1010 and Politex reg pads in acidic slurry

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