中国物理B ›› 2017, Vol. 26 ›› Issue (12): 127701-127701.doi: 10.1088/1674-1056/26/12/127701
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Qiu-Jie Sun(孙秋杰), Yu-Ming Zhang(张玉明), Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yi-Meng Zhang(张艺蒙), Cheng-Zhan Li(李诚瞻), Yan-Li Zhao(赵艳黎), Yi-Men Zhang(张义门)
Qiu-Jie Sun(孙秋杰)1, Yu-Ming Zhang(张玉明)1, Qing-Wen Song(宋庆文)1, Xiao-Yan Tang(汤晓燕)1, Yi-Meng Zhang(张艺蒙)1, Cheng-Zhan Li(李诚瞻)2, Yan-Li Zhao(赵艳黎)2, Yi-Men Zhang(张义门)1
摘要: Near-interface oxide traps (NIOTs) in 4H-SiC metal-oxide-semiconductor (MOS) structures fabricated with and without annealing in NO are systematically investigated in this paper. The properties of NIOTs in SiC MOS structures prepared with and without annealing in NO are studied and compared in detail. Two main categories of the NIOTs, the “slow” and “fast” NIOTs, are revealed and extracted. The densities of the “fast” NIOTs are determined to be 0.76×1011 cm-2 and 0.47×1011 cm-2 for the N2 post oxidation annealing (POA) sample and NO POA sample, respectively. The densities of “slow” NIOTs are 0.79×1011 cm-2 and 9.44×1011 cm-2 for the NO POA sample and N2 POA sample, respectively. It is found that the NO POA process only can significantly reduce “slow” NIOTs. However, it has a little effect on “fast” NIOTs. The negative and positive constant voltage stresses (CVS) reveal that electrons captured by those “slow” NIOTs and bulk oxide traps (BOTs) are hardly emitted by the constant voltage stress.
中图分类号: (Dielectric breakdown and space-charge effects)