Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation

doi:10.1088/1674-1056/ab9434

中国物理B ›› 2020, Vol. 29 ›› Issue (9): 97301-097301.doi: 10.1088/1674-1056/ab9434

Improved electrical properties of NO-nitrided SiC/SiO₂ interface after electron irradiation

Ji-Long Hao(郝继龙), Yun Bai(白云), Xin-Yu Liu(刘新宇), Cheng-Zhan Li(李诚瞻), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Jiang Lu(陆江), Sheng-Kai Wang(王盛凯)

1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou 412000, China

收稿日期:2020-03-18 修回日期:2020-05-01 接受日期:2020-05-19 出版日期:2020-09-05 发布日期:2020-09-05
通讯作者: Yun Bai, Xin-Yu Liu E-mail:baiyun@ime.ac.cn;xyliu@ime.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0100601) and the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159).

Improved electrical properties of NO-nitrided SiC/SiO₂ interface after electron irradiation

Ji-Long Hao(郝继龙)^1,2, Yun Bai(白云)^1,2, Xin-Yu Liu(刘新宇)^1,2, Cheng-Zhan Li(李诚瞻)³, Yi-Dan Tang(汤益丹)^1,2, Hong Chen(陈宏)^1,2, Xiao-Li Tian(田晓丽)^1,2, Jiang Lu(陆江)^1,2, Sheng-Kai Wang(王盛凯)^1,2

1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou 412000, China

Received:2020-03-18 Revised:2020-05-01 Accepted:2020-05-19 Online:2020-09-05 Published:2020-09-05
Contact: Yun Bai, Xin-Yu Liu E-mail:baiyun@ime.ac.cn;xyliu@ime.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0100601) and the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159).

摘要/Abstract

摘要： Effective improvement in electrical properties of NO passivated SiC/SiO₂ interface after being irradiated by electrons is demonstrated. The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude, specifically, from 3×10¹² cm^-2·eV^-1 to 4×10¹¹ cm^-2·eV^-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field. Particularly, the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation, indicating that the carbon-related defects are further reduced.

关键词: SiC, electron irradiation, interface traps, MOS

Abstract: Effective improvement in electrical properties of NO passivated SiC/SiO₂ interface after being irradiated by electrons is demonstrated. The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude, specifically, from 3×10¹² cm^-2·eV^-1 to 4×10¹¹ cm^-2·eV^-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field. Particularly, the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation, indicating that the carbon-related defects are further reduced.

Key words: SiC, electron irradiation, interface traps, MOS

中图分类号: (Electron states at surfaces and interfaces)

73.20.-r

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

郝继龙, 白云, 刘新宇, 李诚瞻, 汤益丹, 陈宏, 田晓丽, 陆江, 王盛凯. Improved electrical properties of NO-nitrided SiC/SiO₂ interface after electron irradiation[J]. 中国物理B, 2020, 29(9): 97301-097301.

Ji-Long Hao(郝继龙), Yun Bai(白云), Xin-Yu Liu(刘新宇), Cheng-Zhan Li(李诚瞻), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Jiang Lu(陆江), Sheng-Kai Wang(王盛凯). Improved electrical properties of NO-nitrided SiC/SiO₂ interface after electron irradiation[J]. Chin. Phys. B, 2020, 29(9): 97301-097301.

参考文献 23

[1]	Shur M and Rumyantsev S L 2006 SiC materials and devices, Vol. 1 (New Jersey: World Scientific)
[2]	Roccaforte F, Fiorenza P and Giannazzo F 2013 ECS J. Solid State Sci. Technol. 2 N3006
[3]	Millan J 2007 IET Circuits, Dev. Syst. 1 372 doi: 10.1049/iet-cds:20070005
[4]	Fiorenza P, Giannazzo F, Vivona M, La Magna A and Roccaforte F 2013 Appl. Phys. Lett. 103 153508 doi: 10.1063/1.4824980
[5]	Afanas'ev V V, Ciobanu F, Dimitrijev S, Pensl G and Stesmans A 2004 J. Phys.: Condes. Matter 16 S1839
[6]	Chung G Y, Tin C C, Williams J R, McDonald K, Chanana R K, Weller R A, Pantelides S T, Feldman L C, Holland OW, Das M K and Palmour J W 2001 IEEE Electron Dev. Lett. 22 176 doi: 10.1109/55.915604
[7]	Williams J R, Chung G Y, Tin C C, McDonald K, Farmer D, Chanana R K, Weller R A, Pantelides S T, Holland O W, Das M K and Feldman L C 2002 Silicon Carbide and Related Materials 2001, Pts 1 and 2, Proceedings 389 967
[8]	Lu C Y, Cooper J A, Tsuji T, Chung G, Williams J R, McDonald K and Feldman L C 2003 IEEE Trans. Electron Dev. 50 1582 doi: 10.1109/TED.2003.814974
[9]	Okamoto D, Yano H, Hirata K, Hatayama T and Fuyuki T 2010 IEEE Electron Dev. Lett. 31 710 doi: 10.1109/LED.2010.2047239
[10]	Sharma Y K, Ahyi A C, Issacs-Smith T, Shen X, Pantelides S T, Zhu X, Feldman L C, Rozen J and Williams J R 2012 Solid-State Electronics 68 103 doi: 10.1016/j.sse.2011.10.030
[11]	Hirai H and Kita K 2016 Jpn. J. Appl. Phys. 55 04ER16
[12]	Peng Z, Wang Y, Shen H, Li C, Wu J, Bai Y, Liu K and Liu X 2016 Microelectron. Reliab. 58 192 doi: 10.1016/j.microrel.2015.11.022
[13]	Friedrichs P, Kimoto T, Ley L and Pensl G 2010 Silicon Carbide, Vol. 2 (New York: Wiley Online Library)
[14]	Storasta L, Bergman J P, Janzen E, Henry A and Lu J 2004 J. Appl. Phys. 96 4909 doi: 10.1063/1.1778819
[15]	Nicollian E H, Brews J R and Nicollian E H 1982 MOS (metal oxide semiconductor) Physics and Technology (Chichester: John Wiley and Sons)
[16]	Schroder D K 2015 Semiconductor material and device characterization (Chichester: John Wiley & Sons) doi: onductor material and device characterization ???Chichester: John Wiley\|\|
[17]	Li H F, Dimitrijev S, Sweatman D and Harrison H B 2000 J. Electro. Mater. 29 1027 doi: 10.1007/s11664-000-0168-3
[18]	Yoshioka H, Nakamura T and Kimoto T 2012 J. Appl. Phys. 111 014502 doi: 10.1063/1.3673572
[19]	Li H F, Dimitrijev S, Sweatman D, Harrison H B, Tanner P and Feil B 1999 J. Appl. Phys. 86 4316 doi: 10.1063/1.371363
[20]	Jamet P and Dimitrijev S 2001 Appl. Phys. Lett. 79 323 doi: 10.1063/1.1385181
[21]	Constant A, Camara N, Godignon P, Placidi M, Perez-Tomas A and Camassel J 2010 J. Electrochem. Soc. 157 G136
[22]	Deak P, Knaup J M, Hornos T, Thill C, Gali A and Frauenheim T 2007 J. Phys. D: Appl. Phys. 40 6242 doi: 10.1088/0022-3727/40/20/S09
[23]	Lenzlinger M and Snow E H 1969 J. Appl. Phys. 40 278 doi: 10.1063/1.1657043

Improved electrical properties of NO-nitrided SiC/SiO₂ interface after electron irradiation

Improved electrical properties of NO-nitrided SiC/SiO₂ interface after electron irradiation

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 23

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Jinlong Hu(胡锦龙), Yuting Zuo(左钰婷), Yuzhou Hao(郝昱州), Guoyu Shu(舒国钰), Yang Wang(王洋), Minxuan Feng(冯敏轩), Xuejie Li(李雪洁), Xiaoying Wang(王晓莹), Jun Sun(孙军), Xiangdong Ding(丁向东), Zhibin Gao(高志斌), Guimei Zhu(朱桂妹), Baowen Li(李保文). Prediction of lattice thermal conductivity with two-stage interpretable machine learning[J]. 中国物理B, 2023, 32(4): 46301-046301.
[2]	Keyi Peng(彭珂依), Jing Yue(岳靖), Wen Zhang(张文), and Jian Li(李剑). Meshfree-based physics-informed neural networks for the unsteady Oseen equations[J]. 中国物理B, 2023, 32(4): 40208-040208.
[3]	Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂). SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current[J]. 中国物理B, 2023, 32(4): 47702-047702.
[4]	Hao Yu(于昊), Ying Xie(谢颖), Jiahui Wei(魏佳辉), Peiqing Zhang(张培晴),Zhiying Cui(崔志英), and Haohai Yu(于浩海). Resonant perfect absorption of molybdenum disulfide beyond the bandgap[J]. 中国物理B, 2023, 32(4): 48101-048101.
[5]	Lijuan Wu(吴丽娟), Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会). A 4H-SiC trench IGBT with controllable hole-extracting path for low loss[J]. 中国物理B, 2023, 32(4): 48503-048503.
[6]	Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需). Design and research of normally-off β-Ga₂O₃/4H-SiC heterojunction field effect transistor[J]. 中国物理B, 2023, 32(3): 37302-037302.
[7]	Chun-Sheng Hu(胡春生), Yun-Jing Wu(仵允京), Yuan-Shuo Liu(刘元硕), Shuai Fu(傅帅),Xiao-Ning Cui(崔晓宁), Yi-Hao Wang(王易昊), and Chang-Wen Zhang(张昌文). Single-layer intrinsic 2H-phase LuX₂ (X = Cl, Br, I) with large valley polarization and anomalous valley Hall effect[J]. 中国物理B, 2023, 32(3): 37306-037306.
[8]	Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红). Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes[J]. 中国物理B, 2023, 32(3): 38502-038502.
[9]	Wen-Jing Zhang(张雯婧), Qing-Song Liu(刘青松), Bo Cheng(程波), Ming-Hao Chao(晁明豪),Yun Xu(徐云), and Guo-Feng Song(宋国峰). A three-band perfect absorber based on a parallelogram metamaterial slab with monolayer MoS₂[J]. 中国物理B, 2023, 32(3): 34211-034211.
[10]	Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504.
[11]	Jie Wei(魏杰), Qinfeng Jiang(姜钦峰), Xiaorong Luo(罗小蓉), Junyue Huang(黄俊岳), Kemeng Yang(杨可萌), Zhen Ma(马臻), Jian Fang(方健), and Fei Yang(杨霏). High performance SiC trench-type MOSFET with an integrated MOS-channel diode[J]. 中国物理B, 2023, 32(2): 28503-028503.
[12]	Xin Wang(王鑫), Xiang-Qin Li(李香琴), Tian-Qing Liu(刘天庆), Li-Dan Zhao(赵丽丹), Ke-Dong Song(宋克东), and Dan Ge(葛丹). Molecular dynamics simulation of interaction between nanorod and phospholipid molecules bilayer[J]. 中国物理B, 2023, 32(1): 16201-016201.
[13]	Yi Zhu(朱翊), Hongliang Lv(吕红亮), Yuming Zhang(张玉明), Ziji Jia(贾紫骥), Jiale Sun(孙佳乐), Zhijun Lyu(吕智军), and Bin Lu(芦宾). MoS₂/Si tunnel diodes based on comprehensive transfer technique[J]. 中国物理B, 2023, 32(1): 18501-018501.
[14]	Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒). Growth behaviors and emission properties of Co-deposited MAPbI₃ ultrathin films on MoS₂[J]. 中国物理B, 2023, 32(1): 17901-017901.
[15]	Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique[J]. 中国物理B, 2022, 31(9): 97401-097401.