Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer

doi:10.1088/1674-1056/ab3e62

中国物理B ›› 2019, Vol. 28 ›› Issue (10): 106802-106802.doi: 10.1088/1674-1056/ab3e62

所属专题： SPECIAL TOPIC — A celebration of the 100th birthday of Kun Huang

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer

1 Key Laboratory of Optoelectronic Information Materials of Hebei Province, Key Laboratory of Digital Medical Engineering of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, China;
2 Department of Electrical and Computer Engineering, Southern Illinois University Carbondale, Carbondale, Illinois 62901, United States;
3 Department of Materials Science and Engineering, National University of Singapore, Singapore 117576, Singapore

收稿日期:2019-06-07 修回日期:2019-08-22 出版日期:2019-10-05 发布日期:2019-10-05
通讯作者: Qingshun Zhang, Xiaobing Yan E-mail:87086486@qq.com;yanxiaobing@ime.ac.cn,xiaobing_yan@126.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61674050 and 61874158), the Top-notch Youth Project in Hebei Province, China (Grant No. BJ2014008), the Outstanding Youth Project of Hebei Province, China (Grant No. F2016201220), the Outstanding Youth Cultivation Project of Hebei University, China (Grant No. 2015JQY01), the Project of Science and Technology Activities for Overseas Researcher, China (Grant No. CL201602), the Institute of Baoding Nanyang Research-New Material Technology Platform, China (Grant No. 17H03), the Project of Distinguished Young of Hebei Province, China (Grant No. A2018201231), the Training Program of Innovation and Entrepreneurship for Undergraduates, China (Grant Nos. 201710075013 and 2017075), the Support Program for the Top Young Talents of Hebei Province, China (Grant No. 70280011807), Training and Introduction of High-level Innovative Talents of Hebei University, China (Grant No. 801260201300), Hundred Persons Plan of Hebei Province, China (Grant Nos. 606999919001, 606999919013, 606999919014, and 801260201300), and Innovation Funding Project of Hebei Province, China (Grant No. CXZZBS2019030).

Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer

Bing Bai(白冰)¹, Hong Wang(王宏)¹, Yan Li(李岩)¹, Yunxia Hao(郝云霞)¹, Bo Zhang(张博)¹, Boping Wang(王博平)¹, Zihang Wang(王子航)¹, Hongqi Yang(杨红旗)¹, Qihang Gao(高启航)¹, Chao Lü(吕超)², Qingshun Zhang(张庆顺)¹, Xiaobing Yan(闫小兵)^1,3

1 Key Laboratory of Optoelectronic Information Materials of Hebei Province, Key Laboratory of Digital Medical Engineering of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, China;
2 Department of Electrical and Computer Engineering, Southern Illinois University Carbondale, Carbondale, Illinois 62901, United States;
3 Department of Materials Science and Engineering, National University of Singapore, Singapore 117576, Singapore

Received:2019-06-07 Revised:2019-08-22 Online:2019-10-05 Published:2019-10-05
Contact: Qingshun Zhang, Xiaobing Yan E-mail:87086486@qq.com;yanxiaobing@ime.ac.cn,xiaobing_yan@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61674050 and 61874158), the Top-notch Youth Project in Hebei Province, China (Grant No. BJ2014008), the Outstanding Youth Project of Hebei Province, China (Grant No. F2016201220), the Outstanding Youth Cultivation Project of Hebei University, China (Grant No. 2015JQY01), the Project of Science and Technology Activities for Overseas Researcher, China (Grant No. CL201602), the Institute of Baoding Nanyang Research-New Material Technology Platform, China (Grant No. 17H03), the Project of Distinguished Young of Hebei Province, China (Grant No. A2018201231), the Training Program of Innovation and Entrepreneurship for Undergraduates, China (Grant Nos. 201710075013 and 2017075), the Support Program for the Top Young Talents of Hebei Province, China (Grant No. 70280011807), Training and Introduction of High-level Innovative Talents of Hebei University, China (Grant No. 801260201300), Hundred Persons Plan of Hebei Province, China (Grant Nos. 606999919001, 606999919013, 606999919014, and 801260201300), and Innovation Funding Project of Hebei Province, China (Grant No. CXZZBS2019030).

摘要/Abstract

摘要： We present a new charge trapping memory (CTM) device with the Au/Ga₂O₃/SiO₂/Si structure, which is fabricated by using the magnetron sputtering, high-temperature annealing, and vacuum evaporation techniques. Transmission electron microscopy diagrams show that the thickness of the SiO₂ tunneling layer can be controlled by the annealing temperature. When the devices are annealed at 760 ℃, the measured C-V hysteresis curves exhibit a maximum 6 V memory window under a ±13 V sweeping voltage. In addition, a slight degradation of the device voltage and capacitance indicates the robust retention properties of flat-band voltage and high/low state capacitance. These distinctive advantages are attributed to oxygen vacancies and inter-diffusion layers, which play a critical role in the charge trapping process.

关键词: charge trapping memory, SiO₂ tunneling layer, annealing temperature

Abstract: We present a new charge trapping memory (CTM) device with the Au/Ga₂O₃/SiO₂/Si structure, which is fabricated by using the magnetron sputtering, high-temperature annealing, and vacuum evaporation techniques. Transmission electron microscopy diagrams show that the thickness of the SiO₂ tunneling layer can be controlled by the annealing temperature. When the devices are annealed at 760 ℃, the measured C-V hysteresis curves exhibit a maximum 6 V memory window under a ±13 V sweeping voltage. In addition, a slight degradation of the device voltage and capacitance indicates the robust retention properties of flat-band voltage and high/low state capacitance. These distinctive advantages are attributed to oxygen vacancies and inter-diffusion layers, which play a critical role in the charge trapping process.

Key words: charge trapping memory, SiO₂ tunneling layer, annealing temperature

中图分类号: (Diffusion; interface formation)

68.35.Fx

85.25.Hv (Superconducting logic elements and memory devices; microelectronic circuits) 06.60.Ei (Sample preparation) 21.10.Ft (Charge distribution)

白冰, 王宏, 李岩, 郝云霞, 张博, 王博平, 王子航, 杨红旗, 高启航, 吕超, 张庆顺, 闫小兵. Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer[J]. 中国物理B, 2019, 28(10): 106802-106802.

Bing Bai(白冰), Hong Wang(王宏), Yan Li(李岩), Yunxia Hao(郝云霞), Bo Zhang(张博), Boping Wang(王博平), Zihang Wang(王子航), Hongqi Yang(杨红旗), Qihang Gao(高启航), Chao Lü(吕超), Qingshun Zhang(张庆顺), Xiaobing Yan(闫小兵). Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer[J]. Chin. Phys. B, 2019, 28(10): 106802-106802.

参考文献 36

[35]	Xu N, Liu L, Sun X, Liu X, Han D, Wang Y, Han R and Yu B 2008 Appl. Phys. Lett. 92 232112 doi: 10.1063/1.2945278
[1]	Cai K M, Yang M Y, Ju H L, Wang S M, Ji Y, Li B H, Edmonds K W, Sheng Y, Zhang B, Zhang N, Liu S, Zheng H Z and Wang K Y 2017 Nat. Mater. 16 712 doi: 10.1038/nmat4886
[36]	Luo W, Cao Y, Hu P, Cai K, Feng, Q, Yan F, Yan T F, Zhang X H and Wang K 2015 Adv. Optic. Mater. 3 1418 doi: 10.1002/adom.201500190
[2]	Wang H, Ren D, Lu C and Yan X B 2018 Appl. Phys. Lett. 112 231903 doi: 10.1063/1.5024799
[3]	Wang K Y 2018 Nat. Electron. 1 378 doi: 10.1038/s41928-018-0105-1
[4]	Chakraborty, Mahato S S, Maiti T K, Bera M K, Mahata C, Samanta S K, Biswas A and Maiti C K 2009 Microelectron. Eng. 86 299 doi: 10.1016/j.mee.2008.10.008
[5]	Park G H and Cho W J 2010 Appl. Phys. Lett. 96 043503 doi: 10.1063/1.3293291
[6]	Mouli C, Prall K and Roberts C 2007 In 14th International Symposium on IPFA. A 381 913
[7]	Jiang K, Ou X, Cao Z Y, Liu X J, Lu W, Xu B, Li A D, Xia Y D, Liu Z G and Lan X X 2014 Appl. Phys. Lett. 104 263506 doi: 10.1063/1.4885717
[8]	Feng Q, Yan F, Luo W and Wang K 2016 Nanoscale 8 2686 doi: 10.1039/C5NR08065G
[9]	Zhao J H, Yan X B, Li Y C, Yang T, Jia X L, Zhou Z Y and Zhang Y Y 2016 J. Appl. Phys. 120 145304 doi: 10.1063/1.4964695
[10]	Lan X X, Ou X, Cao Y Q, Tang S Y, Gong C J, Xu B, Xia Y D, Yin J, Li A D, Yan F and Liu Z G 2013 J. Appl. Phys. 114 299
[11]	Ding S, Zhang M, Chen W, Zhang D W and Wang L 2007 J. Electron. Mater. 36 253 doi: 10.1007/s11664-006-0003-6
[12]	Lee S, Song E B, Kim S, Seo D H, Seo S, Kang T W and Wang K L 2012 Appl. Phys. Lett. 100 023109 doi: 10.1063/1.3675633
[13]	Zhang E, Wang W, Zhang C, Jin Y, Zhu G, Sun Q, Zhang D W, Zhou P and Xiu F 2015 ACS Nano. 9 612 doi: 10.1021/nn5059419
[14]	Tang Z, Zhu X, Xu H, Xia Y, Yin J, Liu Z, Li A and Yan F 2013 Appl. Phys. Lett. 92 21
[15]	Choi B H, Im H B, Song J S and Yoon K H 1990 Thin Solid Films. 193-194 712 doi: 10.1016/0040-6090(90)90223-Z
[16]	Kim H W and Kim N H 2004 Appl. Surf. Sci. 230 301 doi: 10.1016/j.apsusc.2004.02.063
[17]	Matsuzaki K, Hiramatsu H, Nomura K J, Yanagi H, Kamiya T, Hirano M and Hosono H 2006 Thin Solid Films. 496 37 doi: 10.1016/j.tsf.2005.08.187
[18]	Zhang F B, Saito K, Tanaka T, Nishio M and Guo Q X 2014 Cryst. J. Growth. 387 100
[19]	Lee M J, Park Y, Suh D S, Lee E H, Seo S, Kim D C, Jung R J, Kang B S, Ahn S E, Lee C B, Seo D H, Cha Y K, Yoo I K, Kim J S and Park B H 2007 Adv. Mater. 19 3919 doi: 10.1002/adma.200700251
[20]	Chien W C, Chang K P, Chen Y C, Lai E K and Hsieh K Y 2011 US Patent 8.067815
[21]	Sandhu G, Smythe J and Srinivasan B 2012 US Patent 8.114468
[22]	Hong S K, Kim J E, Kim S O and Cho B J 2011 J. Appl. Phys. 110 044506 doi: 10.1063/1.3624947
[23]	Smythe J, Srinivasan B and Sandhu G 2011 US Patent 8.034655
[24]	Guo J J, Dong J Y, Kang X, Chen W and Zhao X 2018 Acta Phys. Sin. 67) 063101 (in Chinese)
[25]	Wang G, Yang Y, Lee J H, Abramova V, Fei H, Ruan G, Thomas E L and James M T 2014 Nano Lett. 14 4694 doi: 10.1021/nl501803s
[26]	Pantelides S T, Lu Z Y, Nicklaw C, Bakos T, Rashkeev S N, Fleetwood D M and Schrimpf R D 2008 J. Non-Cryst. Solids 354 217 doi: 10.1016/j.jnoncrysol.2007.08.080
[27]	Liu X W, Zhou K B, Wang L, Wang B, Li Y and Am J 2009 Che. Soc. 131 3140 doi: 10.1021/ja808433d
[28]	Ban D, Sargent E H, Dixon-Warren S J, Calder I, SpringThorpe A J, Dworschak R, Este G and White J K 2002 Appl. Phys. Lett. 81 5057 doi: 10.1063/1.1528277
[29]	Maikap S, Lee H Y, Wang T Y, Tzeng P J, Wang C C, Lee L S, Liu K C, Yang J R and Tsai M J 2007 Semicond Sci. Tech. 22 884 doi: 10.1088/0268-1242/22/8/010
[30]	Zhu C, Huo Z, Xu Z, Zhang M, Wang Q, Liu J, Long S and Liu M 2010 Appl. Phys. Lett. 97 253503 doi: 10.1063/1.3531559
[31]	Cheng Z G, Zhou Q Y, Wang C X, Li Q, Wang C and Fang Y 2011 Nano Lett. 11 767 doi: 10.1021/nl103977d
[32]	Reed M L and Plummer J D 1988 J. Appl. Phys. 63 5776 doi: 10.1063/1.340317
[33]	Kong L, Ma J, Luan C, Mi W and Lv Y 2012 Thin Solid Films 520 4270 doi: 10.1016/j.tsf.2012.02.027
[34]	Lu Z H, Graham M J, Jiang D T and Tan K H 1993 Appl. Phys. Lett. 63 2941 doi: 10.1063/1.110279
[35]	Xu N, Liu L, Sun X, Liu X, Han D, Wang Y, Han R and Yu B 2008 Appl. Phys. Lett. 92 232112 doi: 10.1063/1.2945278
[36]	Luo W, Cao Y, Hu P, Cai K, Feng, Q, Yan F, Yan T F, Zhang X H and Wang K 2015 Adv. Optic. Mater. 3 1418 doi: 10.1002/adom.201500190

Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer

Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 36

相关文章 8

Metrics

本文评价

推荐阅读 0

[1]	关赫, 姜成语, 王少熙. Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor[J]. 中国物理B, 2020, 29(9): 96701-096701.
[2]	栗旭阳, 喻志农, 程锦, 陈永华, 薛建设, 郭建, 薛唯. Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures[J]. 中国物理B, 2018, 27(4): 48504-048504.
[3]	伦志远, 李云, 赵凯, 杜刚, 刘晓彦, 王漪. Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level[J]. 中国物理B, 2016, 25(8): 88502-088502.
[4]	程越, 赵高杰, 刘益宏, 孙玉俊, 王涛, 陈之战. Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts[J]. 中国物理B, 2015, 24(10): 107303-107303.
[5]	褚玉琼, 张满红, 霍宗亮, 刘明. Comparison between N₂ and O₂ anneals on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack[J]. , 2014, 23(8): 88501-088501.
[6]	黄立, 徐文焱, 阙炎德, 潘毅, 高敏, 潘理达, 郭海明, 王业亮, 杜世萱, 高鸿钧 . The influence of annealing temperature on the morphology of graphene islands[J]. 中国物理B, 2012, 21(8): 88102-088102.
[7]	彭雅华, 刘晓彦, 杜刚, 刘飞, 金锐, 康晋锋 . The influence of thermally assisted tunneling on the performance of charge trapping memory[J]. 中国物理B, 2012, 21(7): 78501-078501.
[8]	宋云成, 刘晓彦, 杜刚, 康晋锋, 韩汝琦. Carriers recombination processes in charge trapping memory cell by simulation[J]. 中国物理B, 2008, 17(7): 2678-2682.