›› 2014, Vol. 23 ›› Issue (7): 77305-077305.doi: 10.1088/1674-1056/23/7/077305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of alumina thickness on Al2O3/InP interface with post deposition annealing in oxygen ambient

杨卓, 杨靖治, 黄永, 张锴, 郝跃   

  1. State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, Xidian University, Xi'an 710071, China
  • 收稿日期:2013-10-21 修回日期:2013-12-24 出版日期:2014-07-15 发布日期:2014-07-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61204006), the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250002), and the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002).

Effect of alumina thickness on Al2O3/InP interface with post deposition annealing in oxygen ambient

Yang Zhuo (杨卓), Yang Jing-Zhi (杨靖治), Huang Yong (黄永), Zhang Kai (张锴), Hao Yue (郝跃)   

  1. State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, Xidian University, Xi'an 710071, China
  • Received:2013-10-21 Revised:2013-12-24 Online:2014-07-15 Published:2014-07-15
  • Contact: Yang Zhuo E-mail:sdyblue@163.com
  • About author:73.40.Qv; 85.30.De; 61.50.Ah; 61.72.Cc
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61204006), the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250002), and the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002).

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摘要： In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing (PDA) in the oxygen ambient is studied. Atomic layer deposited (ALD) Al2O3 films with four different thickness values (5 nm, 7 nm, 9 nm, 11 nm) are deposited on InP substrates. The capacitance-voltage (C-V) measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy (XPS) data present significant growth of indium-phosphorus oxide near the Al2O3/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al2O3 side and oxidized InP, which degrades the interface.

关键词: Al2O3, oxygen annealing, capacitance-voltage measurement, hysteresis curve

Abstract: In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing (PDA) in the oxygen ambient is studied. Atomic layer deposited (ALD) Al2O3 films with four different thickness values (5 nm, 7 nm, 9 nm, 11 nm) are deposited on InP substrates. The capacitance-voltage (C-V) measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy (XPS) data present significant growth of indium-phosphorus oxide near the Al2O3/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al2O3 side and oxidized InP, which degrades the interface.

Key words: Al2O3, oxygen annealing, capacitance-voltage measurement, hysteresis curve

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
85.30.De (Semiconductor-device characterization, design, and modeling) 61.50.Ah (Theory of crystal structure, crystal symmetry; calculations and modeling) 61.72.Cc (Kinetics of defect formation and annealing)