中国物理B ›› 2017, Vol. 26 ›› Issue (6): 67701-067701.doi: 10.1088/1674-1056/26/6/067701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influences of different oxidants on characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition

Ji-Bin Fan(樊继斌), Hong-Xia Liu(刘红侠), Li Duan(段理), Yan Zhang(张研), Xiao-Chen Yu(于晓晨)   

  1. 1 School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
    2 School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2016-11-30 修回日期:2017-02-27 出版日期:2017-06-05 发布日期:2017-06-05
  • 通讯作者: Ji-Bin Fan E-mail:jbfan@chd.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61604016 and 51501017) and the Fundamental Research Funds for the Central Universities, China (Grant No. 310831161003).

Influences of different oxidants on characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition

Ji-Bin Fan(樊继斌)1, Hong-Xia Liu(刘红侠)2, Li Duan(段理)1, Yan Zhang(张研)1, Xiao-Chen Yu(于晓晨)1   

  1. 1 School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
    2 School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2016-11-30 Revised:2017-02-27 Online:2017-06-05 Published:2017-06-05
  • Contact: Ji-Bin Fan E-mail:jbfan@chd.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61604016 and 51501017) and the Fundamental Research Funds for the Central Universities, China (Grant No. 310831161003).

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摘要：

A comparative study of two kinds of oxidants (H2O and O3) with the combination of two metal precursors (TMA and La(iPrCp)3) for atomic layer deposition (ALD) La2O3/Al2O3 nanolaminates is carried out. The effects of different oxidants on the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates are studied. Initial testing results indicate that La2O3/Al2O3 nanolaminates could avoid moisture absorption in the air after thermal annealing. However, moisture absorption occurs in H2O-based La2O3/Al2O3 nanolaminates due to the residue hydroxyl/hydrogen groups during annealing. As a result, roughness enhancement, band offset variation, low dielectric constant and poor electrical characteristics are measured because the properties of H2O-based La2O3/Al2O3 nanolaminates are deteriorated. Addition thermal annealing effects on the properties of O3-based La2O3/Al2O3 nanolaminates indicate that O3 is a more appropriate oxidant to deposit La2O3/Al2O3 nanolaminates for electron devices application.

关键词: La2O3/Al2O3nanolaminates, atomic layer deposition, oxidants, annealing

Abstract:

A comparative study of two kinds of oxidants (H2O and O3) with the combination of two metal precursors (TMA and La(iPrCp)3) for atomic layer deposition (ALD) La2O3/Al2O3 nanolaminates is carried out. The effects of different oxidants on the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates are studied. Initial testing results indicate that La2O3/Al2O3 nanolaminates could avoid moisture absorption in the air after thermal annealing. However, moisture absorption occurs in H2O-based La2O3/Al2O3 nanolaminates due to the residue hydroxyl/hydrogen groups during annealing. As a result, roughness enhancement, band offset variation, low dielectric constant and poor electrical characteristics are measured because the properties of H2O-based La2O3/Al2O3 nanolaminates are deteriorated. Addition thermal annealing effects on the properties of O3-based La2O3/Al2O3 nanolaminates indicate that O3 is a more appropriate oxidant to deposit La2O3/Al2O3 nanolaminates for electron devices application.

Key words: La2O3/Al2O3nanolaminates, atomic layer deposition, oxidants, annealing

中图分类号: 

  • 77.55.D-
82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))