Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

doi:10.1088/1674-1056/23/7/077304

›› 2014, Vol. 23 ›› Issue (7): 77304-077304.doi: 10.1088/1674-1056/23/7/077304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

宓珉瀚, 张凯, 陈兴, 赵胜雷, 王冲, 张进成, 马晓华, 郝跃

Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2013-11-18 修回日期:2014-01-09 出版日期:2014-07-15 发布日期:2014-07-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61334002) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).

Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)

Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2013-11-18 Revised:2014-01-09 Online:2014-07-15 Published:2014-07-15
Contact: Hao Yue E-mail:yhao@xidian.edu.cn
About author:73.40.Kp; 73.61.Ey
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61334002) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).

摘要/Abstract

摘要： A non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor (quasi-E-DHEMT) with a thin barrier, high breakdown voltage and good performance of drain induced barrier lowering (DIBL) was presented. Due to the metal organic chemical vapor deposition (MOCVD) grown 9-nm undoped AlGaN barrier, the effect that the gate metal depleted the two-dimensiomal electron gas (2DEG) was greatly impressed. Therefore, the density of carriers in the channel was nearly zero. Hence, the threshold voltage was above 0 V. Quasi-E-DHEMT with 4.1-μm source-to-drain distance, 2.6-μm gate-to-drain distance, and 0.5-μm gate length showed a drain current of 260 mA/mm. The threshold voltage of this device was 0.165 V when the drain voltage was 10 V and the DIBL was 5.26 mV/V. The quasi-E-DHEMT drain leakage current at a drain voltage of 146 V and a gate voltage of -6 V was below 1 mA/mm. This indicated that the hard breakdown voltage was more than 146 V.

关键词: GaN-based HEMTs, enhancement-mode, high breakdown voltage

Abstract: A non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor (quasi-E-DHEMT) with a thin barrier, high breakdown voltage and good performance of drain induced barrier lowering (DIBL) was presented. Due to the metal organic chemical vapor deposition (MOCVD) grown 9-nm undoped AlGaN barrier, the effect that the gate metal depleted the two-dimensiomal electron gas (2DEG) was greatly impressed. Therefore, the density of carriers in the channel was nearly zero. Hence, the threshold voltage was above 0 V. Quasi-E-DHEMT with 4.1-μm source-to-drain distance, 2.6-μm gate-to-drain distance, and 0.5-μm gate length showed a drain current of 260 mA/mm. The threshold voltage of this device was 0.165 V when the drain voltage was 10 V and the DIBL was 5.26 mV/V. The quasi-E-DHEMT drain leakage current at a drain voltage of 146 V and a gate voltage of -6 V was below 1 mA/mm. This indicated that the hard breakdown voltage was more than 146 V.

Key words: GaN-based HEMTs, enhancement-mode, high breakdown voltage

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.61.Ey (III-V semiconductors)

宓珉瀚, 张凯, 陈兴, 赵胜雷, 王冲, 张进成, 马晓华, 郝跃. Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage[J]. , 2014, 23(7): 77304-077304.

Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage[J]. Chin. Phys. B, 2014, 23(7): 77304-077304.

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Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

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