中国物理B ›› 2018, Vol. 27 ›› Issue (1): 18503-018503.doi: 10.1088/1674-1056/27/1/018503

所属专题： SPECIAL TOPIC — New generation solar cells

• SPECIAL TOPIC—Non-equilibrium phenomena in soft matters • 上一篇    下一篇

Performance enhancement of ZnO nanowires/PbS quantum dot depleted bulk heterojunction solar cells with an ultrathin Al2O3 interlayer

Shuaipu Zang(臧帅普), Yinglin Wang(王莹琳), Meiying Li(李美莹), Wei Su(苏蔚), Meiqi An(安美琦), Xintong Zhang(张昕彤), Yichun Liu(刘益春)   

  1. 1 Center for Advanced Optoelectronic Materials Research, School of Physics, and Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China;
    2 National Demonstration Center for Experimental Physics Education, Northeast Normal University, Changchun 130024, China
  • 收稿日期:2017-09-29 修回日期:2017-11-29 出版日期:2018-01-05 发布日期:2018-01-05
  • 通讯作者: Yinglin Wang, Xintong Zhang E-mail:wangyl100@nenu.edu.cn;xtzhang@nenu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 91233204, 51372036, and 51602047), the Key Project of Chinese Ministry of Education (Grant No. 113020A), and the 111 Project, China (Grant No. B13013).

Performance enhancement of ZnO nanowires/PbS quantum dot depleted bulk heterojunction solar cells with an ultrathin Al2O3 interlayer

Shuaipu Zang(臧帅普)1, Yinglin Wang(王莹琳)1,2, Meiying Li(李美莹)1, Wei Su(苏蔚)1, Meiqi An(安美琦)1, Xintong Zhang(张昕彤)1,2, Yichun Liu(刘益春)1,2   

  1. 1 Center for Advanced Optoelectronic Materials Research, School of Physics, and Key Laboratory of UV-Emitting Materials and Technology of Chinese Ministry of Education, Northeast Normal University, Changchun 130024, China;
    2 National Demonstration Center for Experimental Physics Education, Northeast Normal University, Changchun 130024, China
  • Received:2017-09-29 Revised:2017-11-29 Online:2018-01-05 Published:2018-01-05
  • Contact: Yinglin Wang, Xintong Zhang E-mail:wangyl100@nenu.edu.cn;xtzhang@nenu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 91233204, 51372036, and 51602047), the Key Project of Chinese Ministry of Education (Grant No. 113020A), and the 111 Project, China (Grant No. B13013).

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摘要： Depleted bulk heterojunction (DBH) PbS quantum dot solar cells (QDSCs), appearing with boosted short-circuit current density (Jsc), represent the great potential of solar radiation utilization, but suffer from the problem of increased interfacial charge recombination and reduced open-circuit voltage (Voc). Herein, we report that an insertion of ultrathin Al2O3 layer (ca. 1.2 Å thickness) at the interface of ZnO nanowires (NWs) and PbS quantum dots (QDs) could remarkably improve the performance of DBH-QDSCs fabricated from them, i.e., an increase of Voc from 449 mV to 572 mV, Jsc from 21.90 mA/cm2 to 23.98 mA/cm2, and power conversion efficiency (PCE) from 4.29% to 6.11%. Such an improvement of device performance is ascribed to the significant reduction of the interfacial charge recombination rate, as evidenced by the light intensity dependence on Jsc and Voc, the prolonged electron lifetime, the lowered trap density, and the enlarged recombination activation energy. The present research therefore provides an effective interfacial engineering means to improving the overall performance of DBH-QDSCs, which might also be effective to other types of optoelectronic devices with large interface area.

关键词: interface charge recombination, Al2O3 interlayer, passivation, PbS quantum dots

Abstract: Depleted bulk heterojunction (DBH) PbS quantum dot solar cells (QDSCs), appearing with boosted short-circuit current density (Jsc), represent the great potential of solar radiation utilization, but suffer from the problem of increased interfacial charge recombination and reduced open-circuit voltage (Voc). Herein, we report that an insertion of ultrathin Al2O3 layer (ca. 1.2 Å thickness) at the interface of ZnO nanowires (NWs) and PbS quantum dots (QDs) could remarkably improve the performance of DBH-QDSCs fabricated from them, i.e., an increase of Voc from 449 mV to 572 mV, Jsc from 21.90 mA/cm2 to 23.98 mA/cm2, and power conversion efficiency (PCE) from 4.29% to 6.11%. Such an improvement of device performance is ascribed to the significant reduction of the interfacial charge recombination rate, as evidenced by the light intensity dependence on Jsc and Voc, the prolonged electron lifetime, the lowered trap density, and the enlarged recombination activation energy. The present research therefore provides an effective interfacial engineering means to improving the overall performance of DBH-QDSCs, which might also be effective to other types of optoelectronic devices with large interface area.

Key words: interface charge recombination, Al2O3 interlayer, passivation, PbS quantum dots

中图分类号:  (Quantum well devices (quantum dots, quantum wires, etc.))

  • 85.35.Be
78.67.Lt (Quantum wires) 73.63.Kv (Quantum dots) 62.23.Hj (Nanowires)