中国物理B ›› 2017, Vol. 26 ›› Issue (5): 57702-057702.doi: 10.1088/1674-1056/26/5/057702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Performance and reliability improvement of La2O3/Al2O3 nanolaminates using ultraviolet ozone post treatment

Ji-Bin Fan(樊继斌), Hong-Xia Liu(刘红侠), Bin Sun(孙斌), Li Duan(段理), Xiao-Chen Yu(于晓晨)   

  1. 1 School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
    2 School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2016-12-12 修回日期:2017-01-29 出版日期:2017-05-05 发布日期:2017-05-05
  • 通讯作者: Ji-Bin Fan E-mail:jbfan@chd.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61604016 and 51501017) and the Fundamental Research Funds for the Central Universities, China (Grant No. 310831161003).

Performance and reliability improvement of La2O3/Al2O3 nanolaminates using ultraviolet ozone post treatment

Ji-Bin Fan(樊继斌)1, Hong-Xia Liu(刘红侠)2, Bin Sun(孙斌)1, Li Duan(段理)1, Xiao-Chen Yu(于晓晨)1   

  1. 1 School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
    2 School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2016-12-12 Revised:2017-01-29 Online:2017-05-05 Published:2017-05-05
  • Contact: Ji-Bin Fan E-mail:jbfan@chd.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61604016 and 51501017) and the Fundamental Research Funds for the Central Universities, China (Grant No. 310831161003).

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摘要：

La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 generation. However, the hygroscopic nature of La2O3 hampers its application as dielectrics in electron devices. To cope with this challenge, ultraviolet (UV) ozone post treatment is proposed to suppress the moisture absorption in the H2O-based atomic layer deposition (ALD) La2O3/Al2O3 nanolaminates which is related to the residual hydroxyl/hydrogen groups after annealing. The x-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (AFM) results indicate that the moisture absorption of the H2O-based ALD La2O3/Al2O3 nanolaminates is efficiently suppressed after 600 ℃ annealing, and the electrical characteristics are greatly improved.

关键词: La2O3/Al2O3 nanolaminates, atomic layer deposition, ultraviolet ozone post treatment, annealing

Abstract:

La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 generation. However, the hygroscopic nature of La2O3 hampers its application as dielectrics in electron devices. To cope with this challenge, ultraviolet (UV) ozone post treatment is proposed to suppress the moisture absorption in the H2O-based atomic layer deposition (ALD) La2O3/Al2O3 nanolaminates which is related to the residual hydroxyl/hydrogen groups after annealing. The x-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (AFM) results indicate that the moisture absorption of the H2O-based ALD La2O3/Al2O3 nanolaminates is efficiently suppressed after 600 ℃ annealing, and the electrical characteristics are greatly improved.

Key words: La2O3/Al2O3 nanolaminates, atomic layer deposition, ultraviolet ozone post treatment, annealing

中图分类号: 

  • 77.55.D-
82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))