中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57301-057301.doi: 10.1088/1674-1056/23/5/057301
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
廖雪阳a b, 张凯b, 曾畅a, 郑雪峰b, 恩云飞a, 来萍a, 郝跃b
Liao Xue-Yang (廖雪阳)a b, Zhang Kai (张凯)b, Zeng Chang (曾畅)a, Zheng Xue-Feng (郑雪峰)b, En Yun-Fei (恩云飞)a, Lai Ping (来萍)a, Hao Yue (郝跃)b
摘要: Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) structures. Two types of device structures, namely, the recessed gate structure (RGS) and the normal gate structure (NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching (RIE).
中图分类号: (Electron states at surfaces and interfaces)