Charge trapping behavior and its origin in Al2O3/SiC MIS system

doi:10.1088/1674-1056/24/8/087304

中国物理B ›› 2015, Vol. 24 ›› Issue (8): 87304-087304.doi: 10.1088/1674-1056/24/8/087304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Charge trapping behavior and its origin in Al₂O₃/SiC MIS system

刘新宇^a, 王弋宇^a, 彭朝阳^a, 李诚瞻^b, 吴佳^b, 白云^a, 汤益丹^a, 刘可安^b, 申华军^a

a Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
b Zhuzhou CSR Times Electric Co., Ltd, Zhuzhou 412001, China

收稿日期:2014-12-08 修回日期:2015-04-10 出版日期:2015-08-05 发布日期:2015-08-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61106080) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02305).

Charge trapping behavior and its origin in Al₂O₃/SiC MIS system

Liu Xin-Yu (刘新宇)^a, Wang Yi-Yu (王弋宇)^a, Peng Zhao-Yang (彭朝阳)^a, Li Cheng-Zhan (李诚瞻)^b, Wu Jia (吴佳)^b, Bai Yun (白云)^a, Tang Yi-Dan (汤益丹)^a, Liu Ke-An (刘可安)^b, Shen Hua-Jun (申华军)^a

a Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
b Zhuzhou CSR Times Electric Co., Ltd, Zhuzhou 412001, China

Received:2014-12-08 Revised:2015-04-10 Online:2015-08-05 Published:2015-08-05
Contact: Shen Hua-Jun E-mail:shenhuajun@ime.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61106080) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02305).

摘要/Abstract

摘要：

Charge trapping behavior and its origin in Al₂O₃/SiC MOS structure are investigated by analyzing the capacitance–voltage (C–V) hysteresis and the chemical composition of the interface. The C–V hysteresis is measured as a function of oxide thickness series for an Al₂O₃/SiC MIS capacitor. The distribution of the trapped charges, extracted from the C–V curves, is found to mainly follow a sheet charge model rather than a bulk charge model. Therefore, the electron injection phenomenon is evaluated by using linear fitting. It is found that most of the trapped charges are not distributed exactly at the interface but are located in the bulk of the Al₂O₃ layers, especially close to the border. Furthermore, there is no detectable oxide interface layer in the x-ray photoelectron spectroscope (XPS) and transmission electron microscope (TEM) measurements. In addition, Rutherford back scattering (RBS) analysis shows that the width of the Al₂O₃/SiC interface is less than 1 nm. It could be concluded that the charge trapping sites in Al₂O₃/SiC structure might mainly originate from the border traps in Al₂O₃ film rather than the interface traps in the interfacial transition layer.

关键词: Al₂O₃, SiC, charge trapping sites, interface

Abstract:

Key words: Al₂O₃, SiC, charge trapping sites, interface

中图分类号: (Metal-insulator-metal structures)

73.40.Rw

73.20.-r (Electron states at surfaces and interfaces)

刘新宇, 王弋宇, 彭朝阳, 李诚瞻, 吴佳, 白云, 汤益丹, 刘可安, 申华军. Charge trapping behavior and its origin in Al₂O₃/SiC MIS system[J]. 中国物理B, 2015, 24(8): 87304-087304.

Liu Xin-Yu (刘新宇), Wang Yi-Yu (王弋宇), Peng Zhao-Yang (彭朝阳), Li Cheng-Zhan (李诚瞻), Wu Jia (吴佳), Bai Yun (白云), Tang Yi-Dan (汤益丹), Liu Ke-An (刘可安), Shen Hua-Jun (申华军). Charge trapping behavior and its origin in Al₂O₃/SiC MIS system[J]. Chin. Phys. B, 2015, 24(8): 87304-087304.

参考文献 36

[1]	Li H, Dimitrijev S, Harrison H B and Sweatman D 1997 Appl. Phys. Lett. 70 2028
[2]	McDonald K, Weller R A, Pantelides S T, Feldman L C, Chung G Y, Tin C C and Williams J R 2003 J. Appl. Phys. 93 2719
[3]	Dhar S, Song Y W, Feldman L C, Isaacs-Smith T, Tin C C, Williams J R, Chung G, Nishimura T, Starodub D, Gustafson T and Garfunkel E 2004 Appl. Phys. Lett. 84 1498
[4]	Lu C Y, Cooper J A, Tsuji T, Chung G, Wiliams J R, McDonald K and Feldman L C 2003 IEEE Trans. Electron Dev. 50 1582
[5]	Chung G Y, Tin C C, Wiliams J R, McDonald K, Chanana R K, Weller R A, Pantelides S T, Feldman L C, Holland O W, Das M K and Palmour J W 2001 IEEE Electron Dev. Lett. 22 176
[6]	Rozen J, Ahyi A C, Zhu X G, Williams J R and Feldman L C 2011 IEEE Trans. Electron Dev. 58 3808
[7]	Fujihira K, Tarui Y, Imaizumi M, Ohtsuka K, Takami T, Shiramizu T, Kawase K, Tanimura J and Ozeki T 2005 Solid-State Electron. 49 896
[8]	Yoshioka H, Nakamura T and Kimoto T 2014 J. Appl. Phys. 115 014502
[9]	Noborio M, Grieb M, Bauer A J, Peters D, Friedrichs P, Suda J and Kimoto T 2011 Jpn. J. Appl. Phys. 50 090201
[10]	Matocha K, Dunne G, Soloviev S and Beaupre R 2008 IEEE Trans. Electron Dev. 55 1830
[11]	Lazar H R, Misra V, Johnson R S and Lucovsky G 2001 Appl. Phys. Lett. 79 973
[12]	Groner M D, Elam J W, Fabreguett H H and George S M 2002 Thin Solid Films 413 186
[13]	Gao K Y, Seyller T, Ley L, Ciobanu F, Pensl G, Tadich A, Riley J D and Leckey R G C 2003 Appl. Phys. Lett. 83 1830
[14]	Tanner C M, Perng Y C, Frewin C, Saddow S E and Chang J P 2007 Appl. Phys. Lett. 91 203510
[15]	Avice M, Grossner U, Pintilie I, Svensson B G, Servidori M, Nipoti R, Nilsen O and Fjellvag H 2007 J. Appl. Phys. 102 054513
[16]	Hino S, Hatayama T, Miura N, Oomori T and Tokumitsu E 2007 Mater. Sci. Forum 556 787
[17]	Moriya H, Hino S, Miura N, Oomori T and Tokumitsu E 2009 Mater. Sci. Forum 615 777
[18]	Hino S, Hatayama T, Kato J, Tokumitsu E, Miura N and Oomori T 2008 Appl. Phys. Lett. 92 183503
[19]	Cheong K Y, Moon J H, Eom D, Kim H J, Bahng W and Kim N K 2007 Electrochem. Solid ST 10 H69
[20]	Avice M, Diplas S, Thogersen A, Christensen J S, Grossner U, Svensson B G, Nilsen O, Fjellvag H and Watts J F 2007 Appl. Phys. Lett. 91 052907
[21]	Wang Y Y, Shen H J, Bai Y, Tang Y D, Liu K A, Li C Z and Liu X Y 2013 Chin. Phys. B 22 078102
[22]	Kim E J, Wang L, Asbeck P M, Saraswat K C and Mclntyre P C 2010 Appl. Phys. Lett. 96 012906
[23]	Hu J and Philip Wong H S 2012 J. Appl. Phys. 111 044105
[24]	Lichtenwalner D J, Misra V, Dhar S, Ryu S and Agarwal A 2009 Appl. Phys. Lett. 95 152113
[25]	Hatayama T, Hino S, Miura N, Oomori T and Tokumitsu E 2008 IEEE Trans. Electron Dev. 55 2041
[26]	Hosoi T, Harada M, Kagei Y, Watanabe Y, Shimura T, Mitani S, Nakano Y, Nakamura T and Watanabe H 2009 Mater. Sci. Forum 615 541
[27]	Avice M, Grossner U, Pintilie I, Svensson B G, Nilsen O and Fjellvag H 2006 Appl. Phys. Lett. 89 222103
[28]	Hosoi T, Kagei Y, Kirino T, Mitani S, Nakano Y, Nakmura T, Shimura T and Watanabe H 2011 Mater. Sci. Forum 679 496
[29]	Nicollian E H and Brews J R 2003 MOS Physics and Technology (Hoboken: Wiley) pp. 212–226 and 325–328
[30]	Lin J, Gomeniuk Y Y, Monaghan S, Povey I M, Cherkaoui K, Connor E O, Power M and Hurley P K 2013 J. Appl. Phys. 114 144105
[31]	Schroder D K 2006 Semiconductor Material and Device Characterization, 3rd edn. (Hoboken: Wiley) pp. 71–75
[32]	Xu M, Xu C H, Ding S J, Lu H L, Zhang D W and Wang L K 2006 J. Appl. Phys. 99 074109
[33]	Kerber A, Cartier E, Degraeve R, Pantisano L, Roussel P and Groeseneken G 2002 Symposium on VLSI Dig., June 11–13, 2002, Honolulu, USA, p. 76
[34]	Puurunen R L and Vandervorst W 2004 J. Appl. Phys. 96 4878
[35]	Frank M M, Chabal Y J and Wilk G D 2003 Appl. Phys. Lett. 82 4758
[36]	Klejna S and Elliot S D 2012 J. Phys. Chem. C 116 643

Charge trapping behavior and its origin in Al₂O₃/SiC MIS system

Charge trapping behavior and its origin in Al₂O₃/SiC MIS system

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