A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

doi:10.1088/1674-1056/23/4/048502

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 48502-048502.doi: 10.1088/1674-1056/23/4/048502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

杨斌, 郭志友, 解楠, 张盼君, 李婧, 李方正, 林宏, 郑欢, 蔡金鑫

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology,South China Normal University, Guangzhou 510631, China

收稿日期:2013-08-05 修回日期:2013-10-24 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Project supported by the Special Strategic Emerging Industries of Guangdong Province, China (Grant Nos. 2011A081301004 and 2012A080304006).

A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

Yang Bin (杨斌), Guo Zhi-You (郭志友), Xie Nan (解楠), Zhang Pan-Jun (张盼君), Li Jing (李婧), Li Fang-Zheng (李方正), Lin Hong (林宏), Zheng Huan (郑欢), Cai Jin-Xin (蔡金鑫)

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology,South China Normal University, Guangzhou 510631, China

Received:2013-08-05 Revised:2013-10-24 Online:2014-04-15 Published:2014-04-15
Contact: Guo Zhi-You E-mail:guozy@scnu.edu.cn
About author:85.60.Jb; 68.65.Ac; 78.66.Fd; 78.67.De
Supported by:
Project supported by the Special Strategic Emerging Industries of Guangdong Province, China (Grant Nos. 2011A081301004 and 2012A080304006).

摘要/Abstract

摘要： The advantages of a GaN-AlGaN-InGaN last quantum barrier (LQB) in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombination rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.

关键词: GaN-based light-emitting diode, efficiency droop, multilayer barrier, last quantum barrier

Abstract: The advantages of a GaN-AlGaN-InGaN last quantum barrier (LQB) in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombination rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.

Key words: GaN-based light-emitting diode, efficiency droop, multilayer barrier, last quantum barrier

中图分类号: (Light-emitting devices)

85.60.Jb

68.65.Ac (Multilayers) 78.66.Fd (III-V semiconductors) 78.67.De (Quantum wells)

杨斌, 郭志友, 解楠, 张盼君, 李婧, 李方正, 林宏, 郑欢, 蔡金鑫. A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED[J]. 中国物理B, 2014, 23(4): 48502-048502.

Yang Bin (杨斌), Guo Zhi-You (郭志友), Xie Nan (解楠), Zhang Pan-Jun (张盼君), Li Jing (李婧), Li Fang-Zheng (李方正), Lin Hong (林宏), Zheng Huan (郑欢), Cai Jin-Xin (蔡金鑫). A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED[J]. Chin. Phys. B, 2014, 23(4): 48502-048502.

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A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

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