中国物理B ›› 2018, Vol. 27 ›› Issue (8): 88504-088504.doi: 10.1088/1674-1056/27/8/088504

所属专题： SPECIAL TOPIC — Nanophotonics

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers

Li-Wen Cheng(程立文), Jian Ma(马剑), Chang-Rui Cao(曹常锐), Zuo-Zheng Xu(徐作政), Tian Lan(兰天), Jin-Peng Yang(杨金彭), Hai-Tao Chen(陈海涛), Hong-Yan Yu(于洪岩), Shu-Dong Wu(吴曙东), Shun Yao(尧舜), Xiang-Hua Zeng(曾祥华), Zai-Quan Xu(徐仔全)   

  1. 1 College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China;
    2 Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China;
    3 Sino-Semiconductors Technologies Co., Ltd., Taizhou 225300, China;
    4 Jiangsu Kinzo Opto-electronic Instrument Co., Ltd., Yangzhou 225100, China;
    5 School of Mathematical and Physical Sciences, University of Technology Sydney, 15 Broadway, Ultimo NSW 2007, Australia
  • 收稿日期:2018-04-10 修回日期:2018-05-18 出版日期:2018-08-05 发布日期:2018-08-05
  • 通讯作者: Li-Wen Cheng, Zai-Quan Xu E-mail:lwcheng@yzu.edu.cn;zaiquan.xu@uts.edu.au
  • 基金资助:

    Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403100 and 2017YFB0403101), the National Natural Science Foundation of China (Grant Nos. 61404114, 61504119, and 11004170), the China Postdoctoral Science Foundation (Grant No. 2017M611923), and the Jiangsu Planned Projects for Postdoctoral Research Funds, China (Grant No. 1701067B).

Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers

Li-Wen Cheng(程立文)1,4, Jian Ma(马剑)1, Chang-Rui Cao(曹常锐)1, Zuo-Zheng Xu(徐作政)1, Tian Lan(兰天)2, Jin-Peng Yang(杨金彭)1, Hai-Tao Chen(陈海涛)1, Hong-Yan Yu(于洪岩)2, Shu-Dong Wu(吴曙东)1, Shun Yao(尧舜)3, Xiang-Hua Zeng(曾祥华)1, Zai-Quan Xu(徐仔全)5   

  1. 1 College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China;
    2 Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China;
    3 Sino-Semiconductors Technologies Co., Ltd., Taizhou 225300, China;
    4 Jiangsu Kinzo Opto-electronic Instrument Co., Ltd., Yangzhou 225100, China;
    5 School of Mathematical and Physical Sciences, University of Technology Sydney, 15 Broadway, Ultimo NSW 2007, Australia
  • Received:2018-04-10 Revised:2018-05-18 Online:2018-08-05 Published:2018-08-05
  • Contact: Li-Wen Cheng, Zai-Quan Xu E-mail:lwcheng@yzu.edu.cn;zaiquan.xu@uts.edu.au
  • Supported by:

    Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403100 and 2017YFB0403101), the National Natural Science Foundation of China (Grant Nos. 61404114, 61504119, and 11004170), the China Postdoctoral Science Foundation (Grant No. 2017M611923), and the Jiangsu Planned Projects for Postdoctoral Research Funds, China (Grant No. 1701067B).

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摘要：

In this study, an InGaN lighting-emitting diode (LED) containing GaN/AlGaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or AlGaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.

关键词: lighting-emitting diode, gallium nitride, efficiency droop, triangular barrier

Abstract:

In this study, an InGaN lighting-emitting diode (LED) containing GaN/AlGaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or AlGaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.

Key words: lighting-emitting diode, gallium nitride, efficiency droop, triangular barrier

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
85.60.Bt (Optoelectronic device characterization, design, and modeling) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))