Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

doi:10.1088/1674-1056/22/9/098504

中国物理B ›› 2013, Vol. 22 ›› Issue (9): 98504-098504.doi: 10.1088/1674-1056/22/9/098504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

王幸福, 童金辉, 赵璧君, 陈鑫, 任志伟, 李丹伟, 卓祥景, 章俊, 易翰翔, 李述体

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

收稿日期:2013-01-14 修回日期:2013-03-21 出版日期:2013-07-26 发布日期:2013-07-26

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

Received:2013-01-14 Revised:2013-03-21 Online:2013-07-26 Published:2013-07-26
Contact: Li Shu-Ti E-mail:lishuti@scnu.edu.cn

摘要/Abstract

摘要： The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.

关键词: GaN-based light-emitting diodes, p-InGaN layers, Mg acceptor

Abstract: The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.

Key words: GaN-based light-emitting diodes, p-InGaN layers, Mg acceptor

中图分类号: (Light-emitting devices)

85.60.Jb

87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence) 73.61.Ey (III-V semiconductors)

王幸福, 童金辉, 赵璧君, 陈鑫, 任志伟, 李丹伟, 卓祥景, 章俊, 易翰翔, 李述体. Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers[J]. 中国物理B, 2013, 22(9): 98504-098504.

Wang Xing-Fu (王幸福), Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体). Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers[J]. Chin. Phys. B, 2013, 22(9): 98504-098504.

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Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

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