中国物理B ›› 2013, Vol. 22 ›› Issue (5): 58503-058503.doi: 10.1088/1674-1056/22/5/058503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer

赵芳, 姚光锐, 宋晶晶, 丁彬彬, 熊建勇, 苏晨, 郑树文, 张涛, 范广涵   

  1. a Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    b Laboratory of Nanophotonic Functional Materials and Device, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2012-08-28 修回日期:2012-12-17 出版日期:2013-04-01 发布日期:2013-04-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016).

Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer

Zhao Fang (赵芳), Yao Guang-Rui (姚光锐), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Xiong Jian-Yong (熊建勇), Su Chen (苏晨), Zheng Shu-Wen (郑树文), Zhang Tao (张涛), Fan Guang-Han (范广涵)   

  1. a Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    b Laboratory of Nanophotonic Functional Materials and Device, South China Normal University, Guangzhou 510631, China
  • Received:2012-08-28 Revised:2012-12-17 Online:2013-04-01 Published:2013-04-01
  • Contact: Fan Guang-Han E-mail:gfan@scnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016).

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摘要： The characteristics of a blue light-emitting diode (LED) with an AlInN/GaN superlattice (SL) electron-blocking layer (EBL) are analyzed numerically. The carrier concentrations in the quantum wells, energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results suggest that the LED with an AlInN/GaN SL EBL has better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region than the LED with a conventional rectangular AlGaN EBL or a AlGaN/ GaN SL EBL. The results also indicate that the efficiency droop is markedly improved when an AlInN/GaN SL EBL is used.

关键词: AlInN/GaN superlattices, efficiency droop, numerical simulation

Abstract: The characteristics of a blue light-emitting diode (LED) with an AlInN/GaN superlattice (SL) electron-blocking layer (EBL) are analyzed numerically. The carrier concentrations in the quantum wells, energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results suggest that the LED with an AlInN/GaN SL EBL has better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region than the LED with a conventional rectangular AlGaN EBL or a AlGaN/ GaN SL EBL. The results also indicate that the efficiency droop is markedly improved when an AlInN/GaN SL EBL is used.

Key words: AlInN/GaN superlattices, efficiency droop, numerical simulation

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
85.50.-n (Dielectric, ferroelectric, and piezoelectric devices) 87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence)