Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers

doi:10.1088/1674-1056/22/6/068505

中国物理B ›› 2013, Vol. 22 ›› Issue (6): 68505-068505.doi: 10.1088/1674-1056/22/6/068505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers

童金辉, 赵璧君, 王幸福, 陈鑫, 任志伟, 李丹伟, 卓祥景, 章俊, 易翰翔, 李述体

Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

收稿日期:2012-08-05 修回日期:2012-10-31 出版日期:2013-05-01 发布日期:2013-05-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou, China (Grant No. 2011J4300018).

Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers

Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

Received:2012-08-05 Revised:2012-10-31 Online:2013-05-01 Published:2013-05-01
Contact: Li Shu-Ti E-mail:lishuti@scnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou, China (Grant No. 2011J4300018).

摘要/Abstract

摘要： GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated by using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows the improved light output power, lower current leakage, and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to alleviation of the electrostatic field in the active region.

关键词: GaN-based light-emitting diodes, GaN/InGaN superlattice barriers, electrostatic field

Abstract: GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated by using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows the improved light output power, lower current leakage, and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to alleviation of the electrostatic field in the active region.

Key words: GaN-based light-emitting diodes, GaN/InGaN superlattice barriers, electrostatic field

中图分类号: (Light-emitting devices)

85.60.Jb

87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence) 73.61.Ey (III-V semiconductors)

童金辉, 赵璧君, 王幸福, 陈鑫, 任志伟, 李丹伟, 卓祥景, 章俊, 易翰翔, 李述体. Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers[J]. 中国物理B, 2013, 22(6): 68505-068505.

Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体). Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers[J]. Chin. Phys. B, 2013, 22(6): 68505-068505.

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Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers

Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers

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