中国物理B ›› 2013, Vol. 22 ›› Issue (5): 58502-058502.doi: 10.1088/1674-1056/22/5/058502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

刘超, 任志伟, 陈鑫, 赵璧君, 王幸福, 尹以安, 李述体   

  1. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2012-10-25 修回日期:2013-02-02 出版日期:2013-04-01 发布日期:2013-04-01

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

Liu Chao (刘超), Ren Zhi-Wei (任志伟), Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Yin Yi-An (尹以安), Li Shu-Ti (李述体)   

  1. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • Received:2012-10-25 Revised:2013-02-02 Online:2013-04-01 Published:2013-04-01
  • Contact: Li Shu-Ti E-mail:lishuti@scnu.edu.cn

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摘要： P-InGaN/p-GaN superlattices (SLs) are developed for hole accumulation layer (HAL) of blue light emitting diode (LED). Free hole concentration as high as 2.6×1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhanced light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

关键词: light emitting diodes, hole accumulation layer, efficiency droop

Abstract: P-InGaN/p-GaN superlattices (SLs) are developed for hole accumulation layer (HAL) of blue light emitting diode (LED). Free hole concentration as high as 2.6×1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhanced light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Key words: light emitting diodes, hole accumulation layer, efficiency droop

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
78.60.Fi (Electroluminescence) 73.61.Ey (III-V semiconductors)