中国物理B ›› 2013, Vol. 22 ›› Issue (8): 88504-088504.doi: 10.1088/1674-1056/22/8/088504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer

王天虎a, 徐进良b   

  1. a Beijing Key Laboratory of New and Renewable Energy, North China Electric Power University, Beijing 102206, China;
    b Beijing Key Laboratory of Multiphase Flow and Heat Transfer, North China Electric Power University, Beijing 102206, China
  • 收稿日期:2012-10-29 修回日期:2013-02-26 出版日期:2013-06-27 发布日期:2013-06-27
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. U1034004, 50825603, and 51210011) and the Fundamental Research Funds for the Central Universities, China (Grant No. 12QX14).

Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer

Wang Tian-Hu (王天虎)a, Xu Jin-Liang (徐进良)b   

  1. a Beijing Key Laboratory of New and Renewable Energy, North China Electric Power University, Beijing 102206, China;
    b Beijing Key Laboratory of Multiphase Flow and Heat Transfer, North China Electric Power University, Beijing 102206, China
  • Received:2012-10-29 Revised:2013-02-26 Online:2013-06-27 Published:2013-06-27
  • Contact: Xu Jin-Liang E-mail:xjl@ncepu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. U1034004, 50825603, and 51210011) and the Fundamental Research Funds for the Central Universities, China (Grant No. 12QX14).

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摘要： A sawtooth-shaped electron blocking layer is proposed to improve the performance of light-emitting diodes (LEDs). The energy band diagram, the electrostatic field in the quantum well, the carrier concentration, the electron leakage, and the internal quantum efficiency are systematically studied. The simulation results show that the LED with a sawtooth-shaped electron blocking layer possesses higher output power and a smaller efficiency droop than the LED with a conventional AlGaN electron blocking layer, which is because the electron confinement is enhanced and the hole injection efficiency is improved by the appropriately modified electron blocking layer energy band.

关键词: light-emitting diodes, efficiency droop, electron blocking layer

Abstract: A sawtooth-shaped electron blocking layer is proposed to improve the performance of light-emitting diodes (LEDs). The energy band diagram, the electrostatic field in the quantum well, the carrier concentration, the electron leakage, and the internal quantum efficiency are systematically studied. The simulation results show that the LED with a sawtooth-shaped electron blocking layer possesses higher output power and a smaller efficiency droop than the LED with a conventional AlGaN electron blocking layer, which is because the electron confinement is enhanced and the hole injection efficiency is improved by the appropriately modified electron blocking layer energy band.

Key words: light-emitting diodes, efficiency droop, electron blocking layer

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
85.50.-n (Dielectric, ferroelectric, and piezoelectric devices) 87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence)