中国物理B ›› 2013, Vol. 22 ›› Issue (11): 118504-118504.doi: 10.1088/1674-1056/22/11/118504
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
熊建勇a, 赵芳a, 范广涵a, 许毅钦b, 刘小平a, 宋晶晶a, 丁彬彬a, 张涛a, 郑树文a
Xiong Jian-Yong (熊建勇)a, Zhao Fang (赵芳)a, Fan Guang-Han (范广涵)a, Xu Yi-Qin (许毅钦)b, Liu Xiao-Ping (刘小平)a, Song Jing-Jing (宋晶晶)a, Ding Bin-Bin (丁彬彬)a, Zhang Tao (张涛)a, Zheng Shu-Wen (郑树文)a
摘要: In this study, the efficiency droop of an InGaN light-emitting diode (LED) is reduced significantly by using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device (APSYS).
中图分类号: (Light-emitting devices)