Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection

doi:10.1088/1674-1056/24/5/056806

中国物理B ›› 2015, Vol. 24 ›› Issue (5): 56806-056806.doi: 10.1088/1674-1056/24/5/056806

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection

赵宇坤^{a b}, 李虞锋^{a b}, 黄亚平^{a b}, 王宏^{a b}, 苏喜林^c, 丁文^{a b}, 云峰^{a b c}

a Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi'an Jiaotong University, Xi'an 710049, China;
b Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China;
c Shaanxi Supernova Lighting Technology Co. Ltd, Xi'an 710075, China

收稿日期:2014-10-26 修回日期:2014-12-23 出版日期:2015-05-05 发布日期:2015-05-05
基金资助:
Project supported by the National High Technology Research and Development Program of China (Grant No. 2014AA032608), the Key Laboratory for Mechanical Behavior of Material of Xi'an Jiaotong University, China (Grant No. 20121201), and the Fundamental Research Funds for the Central Universities, China.

Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection

Zhao Yu-Kun (赵宇坤)^{a b}, Li Yu-Feng (李虞锋)^{a b}, Huang Ya-Ping (黄亚平)^{a b}, Wang Hong (王宏)^{a b}, Su Xi-Lin (苏喜林)^c, Ding Wen (丁文)^{a b}, Yun Feng (云峰)^{a b c}

a Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi'an Jiaotong University, Xi'an 710049, China;
b Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China;
c Shaanxi Supernova Lighting Technology Co. Ltd, Xi'an 710075, China

Received:2014-10-26 Revised:2014-12-23 Online:2015-05-05 Published:2015-05-05
Contact: Yun Feng E-mail:fyun2010@mail.xjtu.edu.cn
About author:68.65.Fg; 85.60.Jb; 78.55.Cr; 87.15.A-
Supported by:
Project supported by the National High Technology Research and Development Program of China (Grant No. 2014AA032608), the Key Laboratory for Mechanical Behavior of Material of Xi'an Jiaotong University, China (Grant No. 20121201), and the Fundamental Research Funds for the Central Universities, China.

摘要/Abstract

摘要：

Gallium nitride (GaN) based light-emitting diodes (LEDs) with chirped multiple quantum well (MQW) structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs with uniform quantum wells (QWs), LEDs with chirped MQW structures have better internal quantum efficiency (IQE) and carrier injection efficiency. The droop ratios of LEDs with chirped MQW structures show a remarkable improvement at 600 mA/mm², reduced down from 28.6% (conventional uniform LEDs) to 23.7% (chirped MQWs-a) and 18.6% (chirped MQWs-b), respectively. Meanwhile, the peak IQE increases from 76.9% (uniform LEDs) to 83.7% (chirped MQWs-a) and 88.6% (chirped MQWs-b). The reservoir effect of chirped MQW structures is the significant reason as it could increase hole injection efficiency and radiative recombination. The leakage current and Auger recombination of chirped MQW structures can also be suppressed. Furthermore, the chirped MQWs-b structure with lower potential barriers can enhance the reservoir effect and obtain further improvement of the carrier injection efficiency and radiative recombination, as well as further suppressing efficiency droop.

关键词: efficiency droop, chirped multiple quantum well structure, hole injection, light-emitting diode

Abstract:

Key words: efficiency droop, chirped multiple quantum well structure, hole injection, light-emitting diode

中图分类号: (Quantum wells)

68.65.Fg

85.60.Jb (Light-emitting devices) 78.55.Cr (III-V semiconductors) 87.15.A- (Theory, modeling, and computer simulation)

赵宇坤, 李虞锋, 黄亚平, 王宏, 苏喜林, 丁文, 云峰. Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection[J]. 中国物理B, 2015, 24(5): 56806-056806.

Zhao Yu-Kun (赵宇坤), Li Yu-Feng (李虞锋), Huang Ya-Ping (黄亚平), Wang Hong (王宏), Su Xi-Lin (苏喜林), Ding Wen (丁文), Yun Feng (云峰). Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection[J]. Chin. Phys. B, 2015, 24(5): 56806-056806.

参考文献 19

[1]	Piprek J 2010 Phys. Status Solidi A 207 2217
[2]	Yang Y, Cao X A and Yan C 2008 IEEE Trans. Electron Devices 55 1771
[3]	Sun W, Shatalov M, Deng J, Hu X, Yang J, Lunev A, Bilenko Y, Shur M and Gaska R 2010 Appl. Phys. Lett. 96 061102
[4]	Delaney K T, Rinke P and Walle C G V 2009 Appl. Phys. Lett. 94 191109
[5]	Lu T P, Li S T, Liu C, Zhang K, Xu Y Q, Tong J H, Wu L J, Wang H L, Yang X D, Yin Y, Xiao G W and Zhou Y G 2012 Appl. Phys. Lett. 100 141106
[6]	Hader J, Moloney J V and Koch S W 2010 Appl. Phys. Lett. 96 221106
[7]	Li Y F, Yun F, Su X L, Liu S, Ding W and Hou X 2014 J. Appl. Phys. 116 123101
[8]	Guo W, Zhang M, Bhattacharya P and Heo J 2011 Nano Lett. 11 1434
[9]	Chang J Y and Kuo Y K 2013 Phys. Status Solidi A 210 1103
[10]	Wang T H and Xu J L 2012 Chin. Phys. B 21 128504
[11]	Chen Z, Yang W, Liu L, Wan C H, Li L, He Y F, L N Y, Wang L, Li D, Chen W H and Hu X D 2012 Chin. Phys. B 21 108505
[12]	Zakheim D A, Pavluchenko A S, Bauman D A, Bulashevich K A, Khokhlev O V and Karpov S Y 2012 Phys. Status Solidi A 209 456
[13]	Yin Y A, Wang N Y, Fan G H and Li S T 2014 IEEE Trans. Electron Devices 61 2849
[14]	Chang Y A, Kuo Y T, Chang J Y and Kuo Y K 2012 Opt. Lett. 37 2205
[15]	Li X, Okur S, Zhang F, Avrutin V, Özgür Ü, Morkoc H, Hong S M, Yen S H, Hsu T C and Matulionis A 2012 J. Appl. Phys. 111 063112
[16]	Zhang L, Ding K, Liu N X, Wei T B, Ji X L, Ma P, Yan J C, Wang J X, Zeng Y P and Li J M 2011 Appl. Phys. Lett. 98 101110
[17]	Du C H, Ma Z G, Zhou J M, Lu T P, Jiang Y, Jia H Q, Liu W M and Chen H 2014 Appl. Phys. Lett. 104 151102
[18]	Römer F and Witzigmann B 2014 Opt. Express 22 A1440
[19]	Iveland J, Martinelli L, Peretti J, Speck J S and Weisbuch C 2013 Phys. Rev. Lett. 110 177406

Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection

Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 19

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Yuhui Dong(董宇辉), Danni Yan(严丹妮), Shuai Yang(杨帅), Naiwei Wei(魏乃炜),Yousheng Zou(邹友生), and Haibo Zeng(曾海波). Ion migration in metal halide perovskite QLEDs and its inhibition[J]. 中国物理B, 2023, 32(1): 18507-018507.
[2]	Yidan Zhang(张一丹), Chunshuang Chu(楚春双), Sheng Hang(杭升), Yonghui Zhang(张勇辉),Quan Zheng(郑权), Qing Li(李青), Wengang Bi(毕文刚), and Zihui Zhang(张紫辉). A polarization mismatched p-GaN/p-Al_0.25Ga_0.75N/p-GaN structure to improve the hole injection for GaN based micro-LED with secondary etched mesa[J]. 中国物理B, 2023, 32(1): 18509-018509.
[3]	Pezhman Sheykholeslami-Nasab, Mahdi Davoudi-Darareh, and Mohammad Hassan Yousefi. Modeling and numerical simulation of electrical and optical characteristics of a quantum dot light-emitting diode based on the hopping mobility model: Influence of quantum dot concentration[J]. 中国物理B, 2022, 31(6): 68504-068504.
[4]	Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer[J]. 中国物理B, 2022, 31(1): 17801-017801.
[5]	Hang Su(苏杭), Kun Zhu(朱坤), Jing Qin(钦敬), Mengyao Li(李梦瑶), Yulin Zuo(左郁琳), Yunzheng Wang(王允正), Yinggang Wu(吴迎港), Jiawei Cao(曹佳维), and Guolong Li(李国龙). Large-area fabrication: The next target of perovskite light-emitting diodes[J]. 中国物理B, 2021, 30(8): 88502-088502.
[6]	Mu-Zhen Li(李慕臻), Fei-Yan Li(李飞雁), Qun Zhang(张群), Kai Zhang(张凯), Yu-Zhi Song(宋玉志), Jian-Zhong Fan(范建忠), Chuan-Kui Wang(王传奎), and Li-Li Lin(蔺丽丽). Theoretical verification of intermolecular hydrogen bond induced thermally activated delayed fluorescence in SOBF-Ome[J]. 中国物理B, 2021, 30(12): 123302-123302.
[7]	高江东, 张建立, 全知觉, 刘军林, 江风益. Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection[J]. 中国物理B, 2020, 29(4): 47802-047802.
[8]	陈潜, 杨松鹤, 董磊, 蔡思源, 许家驹, 许宗祥. Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes[J]. 中国物理B, 2020, 29(1): 17302-017302.
[9]	Byung-Ryool Hyun, Mikita Marus, 钟华英, 李德鹏, 刘皓宸, 谢阅, Weon-kyu Koh, 徐冰, 刘言军, 孙小卫. Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals[J]. 中国物理B, 2020, 29(1): 18503-018503.
[10]	王琦, 袁国栋, 刘文强, 赵帅, 张璐, 刘志强, 王军喜, 李晋闽. Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate[J]. 中国物理B, 2019, 28(8): 87802-087802.
[11]	李光, 王林媛, 宋伟东, 姜健, 罗幸君, 郭佳琦, 贺龙飞, 张康, 吴启保, 李述体. Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer[J]. 中国物理B, 2019, 28(5): 58502-058502.
[12]	张东炎, 张洁, 刘晓峰, 陈沙沙, 李慧文, 刘明庆, 叶大千, 王笃祥. Effects of hole-injection through side-walls of large V-pits on efficiency droop in Ⅲ-nitride LEDs[J]. 中国物理B, 2019, 28(4): 48501-048501.
[13]	王燕丽, 李培咸, 许晟瑞, 周小伟, 张心禹, 姜思宇, 黄茹雪, 刘洋, 訾亚丽, 吴金星, 郝跃. Double superlattice structure for improving the performance of ultraviolet light-emitting diodes[J]. 中国物理B, 2019, 28(3): 38502-038502.
[14]	吴倩倩, 曹璠, 孔令媚, 杨绪勇. InP quantum dots-based electroluminescent devices[J]. 中国物理B, 2019, 28(11): 118103-118103.
[15]	李长富, 时凯居, 徐明升, 徐现刚, 冀子武. Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells[J]. 中国物理B, 2019, 28(10): 107803-107803.