中国物理B ›› 2013, Vol. 22 ›› Issue (5): 58503-058503.doi: 10.1088/1674-1056/22/5/058503
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
赵芳, 姚光锐, 宋晶晶, 丁彬彬, 熊建勇, 苏晨, 郑树文, 张涛, 范广涵
Zhao Fang (赵芳), Yao Guang-Rui (姚光锐), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Xiong Jian-Yong (熊建勇), Su Chen (苏晨), Zheng Shu-Wen (郑树文), Zhang Tao (张涛), Fan Guang-Han (范广涵)
摘要: The characteristics of a blue light-emitting diode (LED) with an AlInN/GaN superlattice (SL) electron-blocking layer (EBL) are analyzed numerically. The carrier concentrations in the quantum wells, energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results suggest that the LED with an AlInN/GaN SL EBL has better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region than the LED with a conventional rectangular AlGaN EBL or a AlGaN/ GaN SL EBL. The results also indicate that the efficiency droop is markedly improved when an AlInN/GaN SL EBL is used.
中图分类号: (Light-emitting devices)