中国物理B ›› 2022, Vol. 31 ›› Issue (6): 68101-068101.doi: 10.1088/1674-1056/ac4cb8

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Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes

Ying-Zhe Wang(王颖哲)1, Mao-Sen Wang(王茂森)2, Ning Hua(化宁)2, Kai Chen(陈凯)2, Zhi-Min He(何志敏)2, Xue-Feng Zheng(郑雪峰)1,†, Pei-Xian Li(李培咸)3, Xiao-Hua Ma(马晓华)1, Li-Xin Guo(郭立新)4, and Yue Hao(郝跃)1   

  1. 1 Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 Shanghai Aerospace Electronic Technology Institute, Shanghai 201109, China;
    3 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
    4 School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China
  • 收稿日期:2021-11-24 修回日期:2021-12-26 接受日期:2022-01-19 出版日期:2022-05-17 发布日期:2022-05-17
  • 通讯作者: Xue-Feng Zheng E-mail:xfzheng@mail.xidian.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62104180, 61974115, 11690042, 61634005, 61974111, 12035019, and 61904142), and the Fundamental Research Funds for the Central Universities (Grant No. XJS221106), and the Key Research and Development Program of Shaanxi, China (Grant No. 2020ZDLGY03-05).

Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes

Ying-Zhe Wang(王颖哲)1, Mao-Sen Wang(王茂森)2, Ning Hua(化宁)2, Kai Chen(陈凯)2, Zhi-Min He(何志敏)2, Xue-Feng Zheng(郑雪峰)1,†, Pei-Xian Li(李培咸)3, Xiao-Hua Ma(马晓华)1, Li-Xin Guo(郭立新)4, and Yue Hao(郝跃)1   

  1. 1 Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 Shanghai Aerospace Electronic Technology Institute, Shanghai 201109, China;
    3 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
    4 School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China
  • Received:2021-11-24 Revised:2021-12-26 Accepted:2022-01-19 Online:2022-05-17 Published:2022-05-17
  • Contact: Xue-Feng Zheng E-mail:xfzheng@mail.xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62104180, 61974115, 11690042, 61634005, 61974111, 12035019, and 61904142), and the Fundamental Research Funds for the Central Universities (Grant No. XJS221106), and the Key Research and Development Program of Shaanxi, China (Grant No. 2020ZDLGY03-05).

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摘要： The degradation mechanism of GaN-based near-ultraviolet (NUV, 320-400 nm) light emitting diodes (LEDs) with low-indium content under electrical stress is studied from the aspect of defects. A decrease in the optical power and an increase in the leakage current are observed after electrical stress. The defect behaviors are characterized using deep level transient spectroscopy (DLTS) measurement under different filling pulse widths. After stress, the concentration of defects with the energy level of 0.47-0.56 eV increases, accompanied by decrease in the concentration of 0.72-0.84 eV defects. Combing the defect energy level with the increased yellow luminescence in photoluminescence spectra, the device degradation can be attributed to the activation of the gallium vacancy and oxygen related complex defect along dislocation, which was previously passivated with hydrogen. This study reveals the evolution process of defects under electrical stress and their spatial location, laying a foundation for manufacture of GaN-based NUV LEDs with high reliability.

关键词: light emitting diodes, GaN, electrical stress, defect

Abstract: The degradation mechanism of GaN-based near-ultraviolet (NUV, 320-400 nm) light emitting diodes (LEDs) with low-indium content under electrical stress is studied from the aspect of defects. A decrease in the optical power and an increase in the leakage current are observed after electrical stress. The defect behaviors are characterized using deep level transient spectroscopy (DLTS) measurement under different filling pulse widths. After stress, the concentration of defects with the energy level of 0.47-0.56 eV increases, accompanied by decrease in the concentration of 0.72-0.84 eV defects. Combing the defect energy level with the increased yellow luminescence in photoluminescence spectra, the device degradation can be attributed to the activation of the gallium vacancy and oxygen related complex defect along dislocation, which was previously passivated with hydrogen. This study reveals the evolution process of defects under electrical stress and their spatial location, laying a foundation for manufacture of GaN-based NUV LEDs with high reliability.

Key words: light emitting diodes, GaN, electrical stress, defect

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
85.60.Jb (Light-emitting devices) 73.21.Fg (Quantum wells)