[1] Kebbi Y, Muhammad A I, Sant'Ana A S, do Prado-Silva L, Liu D and Ding T 2020 Comprehensive Reviews in Food Science and Food Safety 19 3501 [2] Khan M A, Takeda R, Yamada Y, Maeda N, Jo M and Hirayama H 2020 Opt. Lett. 45 495 [3] Md Sahar M A A Z, Hassan Z, Ng S S, Lim W F, Lau K S, Alias E A, Ahmad M A, Hamzah N A and Mohd Asri R I 2021 Microelectron. Int. 38 119 [4] Gao J D, Zhang J L, Quan Z J, Liu J L and Jiang F Y 2020 Chin. Phys. B 29 047802 [5] Monti D, Meneghini M, Santi C D, Meneghesso G and Zanoni E 2016 IEEE Trans. Dev. Mater. Reliab. 16 213 [6] Meneghini M, Fabris E, Ruzzarin M, De Santi C, Nomoto K, Hu Z, Li W, Gao X, Jena D, Xing H G, Sun M, Palacios T, Meneghesso G and Zanoni E 2020 Phys. Status Solidi A 217 1900750 [7] Dalapati P, Yamamoto K, Egawa T and Miyoshi M 2021 Appl. Phys. Lett. 118 021101 [8] Rossi F, Pavesi M, Meneghini M, Salviati G, Manfredi M, Meneghesso G, Castaldini A, Cavallini A, Rigutti L, Strass U, Zehnder U and Zanoni E 2006 J. Appl. Phys. 99 053104 [9] Meneghini M, Tazzoli A, Mura G, Meneghesso G and Zanoni E 2010 IEEE Trans. Electron Dev. 57 108 [10] Meneghini M, de Santi C, Trivellin N, Orita K, Takigawa S, Tanaka T, Ueda D, Meneghesso G and Zanoni E 2011 Appl. Phys. Lett. 99 093506 [11] Chen J, Puzyrev Y S, Jiang R, Zhang E X, McCurdy M W, Fleetwood D M, Schrimpf R D, Pantelides S T, Arehart A R, Ringel S A, Saunier P and Lee C 2015 IEEE Trans. Nucl. Sci. 62 2423 [12] Lv Q J, Zhang Y H, Zheng C D, Gao J D, Zhang J L and Liu J L 2020 Chin. Phys. B 29 087801 [13] Su H, Xu S, Tao H, Fan X, Du J, Peng R, Zhao Y, Ai L, Wu H, Zhang J, Li P and Hao Y 2021 IEEE Electron Dev. Lett. 42 1346 [14] Li Y, Wang W, Huang L, Zheng Y, Li X, Tang X, Xie W, Chen X and Li G 2018 J. Mater. Chem. C 6 11255 [15] Wang J, You H, Guo H, Xue J, Yang G, Chen D, Liu B, Lu H, Zhang R and Zheng Y 2020 Appl. Phys. Lett. 116 062104 [16] Khan A, Balakrishnan K and Katona T 2008 Nat. Photon. 2 77 [17] Ruschel J, Glaab J, Susilo N, Hagedorn S, Walde S, Ziffer E, Cho H K, Ploch N L, Wernicke T, Weyers M, Einfeldt S and Kneissl M 2020 Appl. Phys. Lett. 117 241104 [18] Jung E, Lee J K, Kim M S and Kim H 2015 IEEE Trans. Electron Dev. 62 3322 [19] Xu M, Mu Q, Xiao L, Zhou Q, Wang H, Ji Z and Xu X 2016 Mater. Express 6 205 [20] Monti D, Santi C D, Ruos S D, Piva F, Glaab J, Rass J, Einfeldt S, Mehnke F, Enslin J, Wernicke T, Kneissl M, Meneghesso G, Zanoni E and Meneghini M 2019 IEEE Trans. Electron Dev. 66 3387 [21] Dalapati P, Yamamoto K, Egawa T and Miyoshi M 2020 Opt. Mater. 109 110352 [22] La Grassa M, Meneghini M, De Santi C, Mandurrino M, Goano M, Bertazzi F, Zeisel R, Galler B, Meneghesso G and Zanoni E 2015 Microelectron. Reliab. 55 1775 [23] Reshchikov M A and Morkoç H 2005 J. Appl. Phys. 97 061301 [24] Neugebauer J and Van de Walle C G 1996 Appl. Phys. Lett. 69 503 [25] Lang D V 1974 J. Appl. Phys. 45 3023 [26] Lu L, Su S, Ling C C, Xu S, Zhao D, Zhu J, Yang H, Wang J and Ge W 2012 Appl. Phys. Express 5 091001 [27] Makimoto T, Kumarkura K, Nishida T and Kobayashi N 2002 J. Electron. Mater. 31 313 [28] Xie Z, Sui Y, Buckeridge J, Sokol A A, Keal T W and Walsh A 2018 Appl. Phys. Lett. 112 262104 [29] Cho H K, Khan F A, Adesida I, Fang Z Q and Look D C 2008 J. Phys. D: Appl. Phys. 41 155314 [30] Meneghini M, la Grassa M, Vaccari S, Galler B, Zeisel R, Drechsel P, Hahn B, Meneghesso G and Zanoni E 2014 Appl. Phys. Lett. 104 113505 [31] Hierro A, Arehart A R, Heying B, Hansen M, Speck J S, Mishra U K, DenBaars S P and Ringel S A 2001 Phys. Status Solidi B 228 309 [32] Usami S, Ando Y, Tanaka A, Nagamatsu K, Deki M, Kushimoto M, Nitta S, Honda Y, Amano H, Sugawara Y, Yao Y Z and Ishikawa Y 2018 Appl. Phys. Lett. 112 182106 [33] Kim J, Tak Y, Kim J, Chae S, Kim J Y and Park Y 2013 J. Appl. Phys. 114 013101 [34] Wright A F and Grossner U 1998 Appl. Phys. Lett. 73 2751 [35] Lee S M, Belkhir M A, Zhu X Y, Lee Y H, Hwang Y G and Frauenheim T 2000 Phys. Rev. B 61 16033 [36] Elsner J, Jones R, Heggie M I, Sitch P K, Haugk M, Frauenheim T, Öberg S and Briddon P R 1998 Phys. Rev. B 58 12571 [37] Chen J, Puzyrev Y S, Zhang E X, Fleetwood D M, Schrimpf R D, Arehart A R, Ringel S A, Kaun S W, Kyle E C H, Speck J S, Saunier P, Lee C and Pantelides S T 2016 IEEE Trans. Dev. Mater. Reliab. 16 282 [38] Johnstone D 2007 Summary of deep level defect characteristics in GaN and AlGaN SPIE 6473 64730 [39] Van de Walle C G and Neugebauer J 2004 J. Appl. Phys. 95 3851 [40] Lyons J L, Wickramaratne D and Van de Walle C G 2021 J. Appl. Phys. 129 111101 [41] Emiroglu D, Evans-Freeman J, Kappers M J, McAleese C and Humphreys C J 2008 Phys. Status Solidi C 5 1482 [42] Kang T W, Bai I H, Hong C Y, Chung C K and Kim T W 1993 J. Mater. Sci. 28 3423 [43] Puzyrev Y S, Roy T, Beck M, Tuttle B R, Schrimpf R D, Fleetwood D M and Pantelides S T 2011 J. Appl. Phys. 109 034501 [44] Niu X, Ma X, Hou B, Yang L, Lin Y S, Zhu Q, Ciou F M, Chen K H, Chen Y, Du J, Wu M, Zhang M, Wang C, Chang T C and Hao Y 2021 IEEE Trans. Electron Dev. 68 4283 [45] De Santi C, Caria A, Piva F, Meneghesso G, Zanoni E and Meneghini M 2021 Reliability of Semiconductor Lasers and Optoelectronic Devices, edited by Herrick R W and Ueda O (Woodhead Publishing) [46] Cao X A, Sandvik P M, LeBoeuf S F and Arthur S D 2003 Microelectron. Reliab. 43 1987 |