中国物理B ›› 2013, Vol. 22 ›› Issue (5): 58501-058501.doi: 10.1088/1674-1056/22/5/058501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Analytical models of lateral power devices with arbitrary vertical doping profiles in drift region

花婷婷a, 郭宇锋a, 于映a, Gene Sheub, 蹇彤a, 姚佳飞a   

  1. a College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;
    b Department of Computer Science & Information Engineering, Asia University, Taiwan 41354, China
  • 收稿日期:2012-10-10 修回日期:2012-12-10 出版日期:2013-04-01 发布日期:2013-04-01
  • 基金资助:
    Projects supported by the National Natural Science Foundation of China (Grant No. 61076073), the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No. 09KJB510010), the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201011), and the Research and Innovation Project for College Graduates of Jiangsu Province, China (Grant No. CXZZ11_0382).

Analytical models of lateral power devices with arbitrary vertical doping profiles in drift region

Hua Ting-Ting (花婷婷)a, Guo Yu-Feng (郭宇锋)a, Yu Ying (于映)a, Gene Sheub, Jian Tong (蹇彤)a, Yao Jia-Fei (姚佳飞)a   

  1. a College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;
    b Department of Computer Science & Information Engineering, Asia University, Taiwan 41354, China
  • Received:2012-10-10 Revised:2012-12-10 Online:2013-04-01 Published:2013-04-01
  • Contact: Guo Yu-Feng E-mail:yfguo@njupt.edu.cn
  • Supported by:
    Projects supported by the National Natural Science Foundation of China (Grant No. 61076073), the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No. 09KJB510010), the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201011), and the Research and Innovation Project for College Graduates of Jiangsu Province, China (Grant No. CXZZ11_0382).

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摘要： By solving 2D Poisson's equation, analytical models are proposed to calculate the surface potential and electric field distributions of lateral power devices with arbitrary vertical doping profiles. The vertical and the lateral breakdown voltages are formulized to quantify the breakdown characteristic in completely-depleted and partially-depleted cases. A new reduced surface field (RESURF) criterion which can be used in various drift doping profiles is further derived for obtaining the optimal trade-off between the breakdown voltage and the on-resistance. Based on these models and the numerical simulation, the electric field modulation mechanism and the breakdown characteristics of lateral power devices are investigated in detail for the uniform, linear, Gaussian, and some discrete doping profiles along the vertical direction in the drift region. Then, the mentioned vertical doping profiles of these devices with the same geometric parameters are optimized, and the results show that the optimal breakdown voltages and the effective drift doping concentrations of these devices are identical, which are equal to those of the uniform-doped device, respectively. The analytical results of these proposed models are in good agreement with the numerical results and the previously experimental results, confirming the validity of the models presented here.

关键词: surface electric field, breakdown voltage, optimization

Abstract: By solving 2D Poisson's equation, analytical models are proposed to calculate the surface potential and electric field distributions of lateral power devices with arbitrary vertical doping profiles. The vertical and the lateral breakdown voltages are formulized to quantify the breakdown characteristic in completely-depleted and partially-depleted cases. A new reduced surface field (RESURF) criterion which can be used in various drift doping profiles is further derived for obtaining the optimal trade-off between the breakdown voltage and the on-resistance. Based on these models and the numerical simulation, the electric field modulation mechanism and the breakdown characteristics of lateral power devices are investigated in detail for the uniform, linear, Gaussian, and some discrete doping profiles along the vertical direction in the drift region. Then, the mentioned vertical doping profiles of these devices with the same geometric parameters are optimized, and the results show that the optimal breakdown voltages and the effective drift doping concentrations of these devices are identical, which are equal to those of the uniform-doped device, respectively. The analytical results of these proposed models are in good agreement with the numerical results and the previously experimental results, confirming the validity of the models presented here.

Key words: surface electric field, breakdown voltage, optimization

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices) 84.70.+p (High-current and high-voltage technology: power systems; power transmission lines and cables)