中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47803-047803.doi: 10.1088/1674-1056/27/4/047803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Bin Zhao(赵斌), Wei Hu(胡巍), Xian-Sheng Tang(唐先胜), Wen-Xue Huo(霍雯雪), Li-Li Han(韩丽丽), Ming-Long Zhao(赵明龙), Zi-Guang Ma(马紫光), Wen-Xin Wang(王文新), Hai-Qiang Jia(贾海强), Hong Chen(陈弘)   

  1. 1. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2017-12-17 修回日期:2018-01-09 出版日期:2018-04-05 发布日期:2018-04-05
  • 通讯作者: Hong Chen E-mail:hchen@iphy.ac.cn
  • 基金资助:

    Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400600 and 2016YFB0400603) and the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340).

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Bin Zhao(赵斌)1,2, Wei Hu(胡巍)1,2, Xian-Sheng Tang(唐先胜)1,2, Wen-Xue Huo(霍雯雪)1,2, Li-Li Han(韩丽丽)1,2, Ming-Long Zhao(赵明龙)1,2, Zi-Guang Ma(马紫光)1, Wen-Xin Wang(王文新)1, Hai-Qiang Jia(贾海强)1, Hong Chen(陈弘)1   

  1. 1. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-12-17 Revised:2018-01-09 Online:2018-04-05 Published:2018-04-05
  • Contact: Hong Chen E-mail:hchen@iphy.ac.cn
  • Supported by:

    Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400600 and 2016YFB0400603) and the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340).

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摘要：

We report a type of thin film AlGaInP red light emitting diode (RLED) on a metallic substrate by electroplating copper (Cu) to eliminate the absorption of GaAs grown substrate. The fabrication of the thin film RLED is presented in detail. Almost no degradations of epilayers properties are observed after this substrate transferred process. Photoluminescence and electroluminescence are measured to investigate the luminous characteristics. The thin film RLED shows a significant enhancement of light output power (LOP) by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the GaAs parent substrate. The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm2 and 35 A/cm2 respectively from electroluminescence. Moreover, reduced forward voltages, stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing. These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes. The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices, especially for thin film types.

关键词: light emitting diodes, thin film, electroplating, substrate transferred process

Abstract:

We report a type of thin film AlGaInP red light emitting diode (RLED) on a metallic substrate by electroplating copper (Cu) to eliminate the absorption of GaAs grown substrate. The fabrication of the thin film RLED is presented in detail. Almost no degradations of epilayers properties are observed after this substrate transferred process. Photoluminescence and electroluminescence are measured to investigate the luminous characteristics. The thin film RLED shows a significant enhancement of light output power (LOP) by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the GaAs parent substrate. The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm2 and 35 A/cm2 respectively from electroluminescence. Moreover, reduced forward voltages, stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing. These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes. The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices, especially for thin film types.

Key words: light emitting diodes, thin film, electroplating, substrate transferred process

中图分类号:  (Electroluminescence)

  • 78.60.Fi
73.21.Ac (Multilayers) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 78.55.Cr (III-V semiconductors)