Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

doi:10.1088/1674-1056/25/5/058101

中国物理B ›› 2016, Vol. 25 ›› Issue (5): 58101-058101.doi: 10.1088/1674-1056/25/5/058101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

Yang Liu(刘扬), Yongchun Yang(杨永春)

1. School of Resource and Environmental Science, Lanzhou University, Lanzhou 730000, China;
2. Key Laboratory of West China's Enviromental Science, Lanzhou 730000, China

收稿日期:2015-11-29 修回日期:2016-03-15 出版日期:2016-05-05 发布日期:2016-05-05
通讯作者: Yongchun Yang E-mail:yangych@lzu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 41171143).

Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

Yang Liu(刘扬)¹, Yongchun Yang(杨永春)^1,2

1. School of Resource and Environmental Science, Lanzhou University, Lanzhou 730000, China;
2. Key Laboratory of West China's Enviromental Science, Lanzhou 730000, China

Received:2015-11-29 Revised:2016-03-15 Online:2016-05-05 Published:2016-05-05
Contact: Yongchun Yang E-mail:yangych@lzu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 41171143).

摘要/Abstract

摘要： The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop.

关键词: light emitting diodes, droop, Mg doping

Abstract: The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop.

Key words: light emitting diodes, droop, Mg doping

中图分类号: (III-V semiconductors)

81.05.Ea

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.55.Cr (III-V semiconductors)

刘扬, 杨永春. Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes[J]. 中国物理B, 2016, 25(5): 58101-058101.

Yang Liu(刘扬), Yongchun Yang(杨永春). Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes[J]. Chin. Phys. B, 2016, 25(5): 58101-058101.

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Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

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