中国物理B ›› 2015, Vol. 24 ›› Issue (6): 68506-068506.doi: 10.1088/1674-1056/24/6/068506

所属专题： TOPICAL REVIEW — III-nitride optoelectronic materials and devices

• TOPICAL REVIEW—III-nitride optoelectronic materials and devices • 上一篇    下一篇

Progress and prospects of GaN-based LEDs using nanostructures

赵丽霞, 于治国, 孙波, 朱石超, 安平博, 杨超, 刘磊, 王军喜, 李晋闽   

  1. Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2015-04-15 修回日期:2015-05-04 发布日期:2015-06-25
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 61334009), the National High Technology Research and Development Program of China (Grant Nos. 2015AA03A101 and 2014BAK02B08), China International Science and Technology Cooperation Program (Grant No. 2014DFG62280), the "Import Outstanding Technical Talent Plan" and "Youth Innovation Promotion Association Program" of the Chinese Academy of Sciences.

Progress and prospects of GaN-based LEDs using nanostructures

Zhao Li-Xia (赵丽霞), Yu Zhi-Guo (于治国), Sun Bo (孙波), Zhu Shi-Chao (朱石超), An Ping-Bo (安平博), Yang Chao (杨超), Liu Lei (刘磊), Wang Jun-Xi (王军喜), Li Jin-Min (李晋闽)   

  1. Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2015-04-15 Revised:2015-05-04 Published:2015-06-25
  • Contact: Zhao Li-Xia E-mail:lxzhao@semi.ac.cn
  • About author:85.60.Jb; 62.23.St; 78.66.Fd; 81.07.-b
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 61334009), the National High Technology Research and Development Program of China (Grant Nos. 2015AA03A101 and 2014BAK02B08), China International Science and Technology Cooperation Program (Grant No. 2014DFG62280), the "Import Outstanding Technical Talent Plan" and "Youth Innovation Promotion Association Program" of the Chinese Academy of Sciences.

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摘要：

Progress with GaN-based light emitting diodes (LEDs) that incorporate nanostructures is reviewed, especially the recent achievements in our research group. Nano-patterned sapphire substrates have been used to grow an AlN template layer for deep-ultraviolet (DUV) LEDs. One efficient surface nano-texturing technology, hemisphere-cones-hybrid nanostructures, was employed to enhance the extraction efficiency of InGaN flip-chip LEDs. Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core. Based on the nanostructures, we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask. Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer, the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%. Furthermore, nanostructures have been used for the growth of GaN LEDs on amorphous substrates, the fabrication of stretchable LEDs, and for increasing the 3-dB modulation bandwidth for visible light communication.

关键词: GaN-based light emitting diodes (LEDs), nanostructure, nano-patterned sapphire substrate, surface plasmon

Abstract:

Progress with GaN-based light emitting diodes (LEDs) that incorporate nanostructures is reviewed, especially the recent achievements in our research group. Nano-patterned sapphire substrates have been used to grow an AlN template layer for deep-ultraviolet (DUV) LEDs. One efficient surface nano-texturing technology, hemisphere-cones-hybrid nanostructures, was employed to enhance the extraction efficiency of InGaN flip-chip LEDs. Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core. Based on the nanostructures, we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask. Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer, the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%. Furthermore, nanostructures have been used for the growth of GaN LEDs on amorphous substrates, the fabrication of stretchable LEDs, and for increasing the 3-dB modulation bandwidth for visible light communication.

Key words: GaN-based light emitting diodes (LEDs), nanostructure, nano-patterned sapphire substrate, surface plasmon

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
62.23.St (Complex nanostructures, including patterned or assembled structures) 78.66.Fd (III-V semiconductors) 81.07.-b (Nanoscale materials and structures: fabrication and characterization)