中国物理B ›› 2014, Vol. 23 ›› Issue (10): 106106-106106.doi: 10.1088/1674-1056/23/10/106106

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template

黄呈橙a, 张霞a, 许福军a, 许正昱a, 陈广a, 杨志坚a, 唐宁a, 王新强a b, 沈波a b   

  1. a State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
    b Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
  • 收稿日期:2014-04-28 修回日期:2014-06-04 出版日期:2014-10-15 发布日期:2014-10-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11174008 and 61361166007), the National Basic Research Program of China (Grant Nos. 2012CB619306 and 2012CB619301), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100001120012).

Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template

Huang Cheng-Cheng (黄呈橙)a, Zhang Xia (张霞)a, Xu Fu-Jun (许福军)a, Xu Zheng-Yu (许正昱)a, Chen Guang (陈广)a, Yang Zhi-Jian (杨志坚)a, Tang Ning (唐宁)a, Wang Xin-Qiang (王新强)a b, Shen Bo (沈波)a b   

  1. a State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
    b Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
  • Received:2014-04-28 Revised:2014-06-04 Online:2014-10-15 Published:2014-10-15
  • Contact: Xu Fu-Jun,Shen Bo E-mail:fjxu@pku.edu.cn;bshen@pku.edu.cn
  • About author:61.66.Dk; 61.72.-y; 61.72.J-; 61.72.jd
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11174008 and 61361166007), the National Basic Research Program of China (Grant Nos. 2012CB619306 and 2012CB619301), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100001120012).

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摘要： Epitaxial evolution of buried cracks in a strain-controlled AlN/GaN superlattice interlayer (IL) grown on GaN template, resulting in crack-free AlGaN/GaN multiple quantum wells (MQW), was investigated. The processes of filling the buried cracks include crack formation in the IL, coalescence from both side walls of the crack, build-up of an MQW-layer hump above the cracks, lateral expansion and merging with the surrounding MQW, and two-dimensional step flow growth. It was confirmed that the filling content in the buried cracks is pure GaN, originating from the deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms into the cracks plays a key role in the filling the buried cracks.

关键词: AlGaN/GaN, multiple quantum wells, epitaxial evolution

Abstract: Epitaxial evolution of buried cracks in a strain-controlled AlN/GaN superlattice interlayer (IL) grown on GaN template, resulting in crack-free AlGaN/GaN multiple quantum wells (MQW), was investigated. The processes of filling the buried cracks include crack formation in the IL, coalescence from both side walls of the crack, build-up of an MQW-layer hump above the cracks, lateral expansion and merging with the surrounding MQW, and two-dimensional step flow growth. It was confirmed that the filling content in the buried cracks is pure GaN, originating from the deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms into the cracks plays a key role in the filling the buried cracks.

Key words: AlGaN/GaN, multiple quantum wells, epitaxial evolution

中图分类号:  (Alloys )

  • 61.66.Dk
61.72.-y (Defects and impurities in crystals; microstructure) 61.72.J- (Point defects and defect clusters) 61.72.jd (Vacancies)