中国物理B ›› 2022, Vol. 31 ›› Issue (7): 74206-074206.doi: 10.1088/1674-1056/ac597c

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Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers

Wen-Jie Wang(王文杰)1,2,†, Ming-Le Liao(廖明乐)1,2, Jun Yuan(袁浚)1,2, Si-Yuan Luo(罗思源)1,2, and Feng Huang(黄锋)1,2   

  1. 1 Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China;
    2 Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China
  • 收稿日期:2021-11-24 修回日期:2022-01-23 接受日期:2022-03-02 出版日期:2022-06-09 发布日期:2022-06-21
  • 通讯作者: Wen-Jie Wang E-mail:wangwenjie_mtrc@caep.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62004180 and 61805218), the Science Challenge Project, China (Grant No. TZ2016003-2-1), and the National Key Research and Development Program of China (Grant Nos. 2017YFB0403100 and 2017YFB0403103).

Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers

Wen-Jie Wang(王文杰)1,2,†, Ming-Le Liao(廖明乐)1,2, Jun Yuan(袁浚)1,2, Si-Yuan Luo(罗思源)1,2, and Feng Huang(黄锋)1,2   

  1. 1 Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China;
    2 Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China
  • Received:2021-11-24 Revised:2022-01-23 Accepted:2022-03-02 Online:2022-06-09 Published:2022-06-21
  • Contact: Wen-Jie Wang E-mail:wangwenjie_mtrc@caep.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62004180 and 61805218), the Science Challenge Project, China (Grant No. TZ2016003-2-1), and the National Key Research and Development Program of China (Grant Nos. 2017YFB0403100 and 2017YFB0403103).

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摘要： The effects of GaN/InGaN asymmetric lower waveguide (LWG) layers on photoelectrical properties of InGaN multiple quantum well laser diodes (LDs) with an emission wavelength of around 416 nm are theoretically investigated by tuning the thickness and the indium content of InGaN insertion layer (InGaN-IL) between the GaN lower waveguide layer and the quantum wells, which is achieved with the Crosslight Device Simulation Software (PIC3D, Crosslight Software Inc.). The optimal thickness and the indium content of the InGaN-IL in lower waveguide layers are found to be 300 nm and 4%, respectively. The thickness of InGaN-IL predominantly affects the output power and the optical field distribution in comparison with the indium content, and the highest output power is achieved to be 1.25 times that of the reference structure (symmetric GaN waveguide), which is attributed to the reduced optical absorption loss as well as the concentrated optical field nearby quantum wells. Furthermore, when the thickness and indium content of InGaN-IL both reach a higher level, the performance of asymmetric quantum wells LDs will be weakened rapidly due to the obvious decrease of optical confinement factor (OCF) related to the concentrated optical field in the lower waveguide.

关键词: asymmetric waveguide structure, InGaN multiple quantum wells, optical absorption loss, optical field distribution

Abstract: The effects of GaN/InGaN asymmetric lower waveguide (LWG) layers on photoelectrical properties of InGaN multiple quantum well laser diodes (LDs) with an emission wavelength of around 416 nm are theoretically investigated by tuning the thickness and the indium content of InGaN insertion layer (InGaN-IL) between the GaN lower waveguide layer and the quantum wells, which is achieved with the Crosslight Device Simulation Software (PIC3D, Crosslight Software Inc.). The optimal thickness and the indium content of the InGaN-IL in lower waveguide layers are found to be 300 nm and 4%, respectively. The thickness of InGaN-IL predominantly affects the output power and the optical field distribution in comparison with the indium content, and the highest output power is achieved to be 1.25 times that of the reference structure (symmetric GaN waveguide), which is attributed to the reduced optical absorption loss as well as the concentrated optical field nearby quantum wells. Furthermore, when the thickness and indium content of InGaN-IL both reach a higher level, the performance of asymmetric quantum wells LDs will be weakened rapidly due to the obvious decrease of optical confinement factor (OCF) related to the concentrated optical field in the lower waveguide.

Key words: asymmetric waveguide structure, InGaN multiple quantum wells, optical absorption loss, optical field distribution

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.82.Et (Waveguides, couplers, and arrays)