中国物理B ›› 2013, Vol. 22 ›› Issue (12): 128503-128503.doi: 10.1088/1674-1056/22/12/128503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

0.15-μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz

钟英辉a, 张玉明a, 张义门a, 王显泰b, 吕红亮a, 刘新宇b, 金智b   

  1. a School of Microelectronics, Xidian University, Xi’an 710071, China;
    b Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2013-03-06 修回日期:2013-04-08 出版日期:2013-10-25 发布日期:2013-10-25
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2010CB327502 and 2010CB327505) and the Advance Research Project (Grant No. 5130803XXXX).

0.15-μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz

Zhong Ying-Hui (钟英辉)a, Zhang Yu-Ming (张玉明)a, Zhang Yi-Men (张义门)a, Wang Xian-Tai (王显泰)b, Lü Hong-Liang (吕红亮)a, Liu Xin-Yu (刘新宇)b, Jin Zhi (金智)b   

  1. a School of Microelectronics, Xidian University, Xi’an 710071, China;
    b Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2013-03-06 Revised:2013-04-08 Online:2013-10-25 Published:2013-10-25
  • Contact: Jin Zhi E-mail:jinzhi@ime.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2010CB327502 and 2010CB327505) and the Advance Research Project (Grant No. 5130803XXXX).

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摘要： In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors (HEMTs) each with a gate-width of 2×50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance (gm,max) values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage (BVGD) defined at a gate current of-1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency (fT) of 164 GHz and a maximum oscillation frequency (fmax) of 390 GHz are successfully obtained; moreover, the fmax of our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high gm,max, BVGD, fmax, and channel current collectively make this device a good candidate for high frequency power applications.

关键词: breakdown voltage, cut-off frequency, high electron mobility transistors, maximum oscillation frequency

Abstract: In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors (HEMTs) each with a gate-width of 2×50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance (gm,max) values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage (BVGD) defined at a gate current of-1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency (fT) of 164 GHz and a maximum oscillation frequency (fmax) of 390 GHz are successfully obtained; moreover, the fmax of our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high gm,max, BVGD, fmax, and channel current collectively make this device a good candidate for high frequency power applications.

Key words: breakdown voltage, cut-off frequency, high electron mobility transistors, maximum oscillation frequency

中图分类号:  (Semiconductor devices)

  • 85.30.-z
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.30.Tv (Field effect devices)