Chin. Phys. B ›› 2012, Vol. 21 ›› Issue (12): 128503-128503.doi: 10.1088/1674-1056/21/12/128503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Junction barrier Schottky rectifier with improved P-well region

王颖, 李婷, 曹菲, 邵雷, 陈宇贤   

  1. College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China
  • 收稿日期:2012-03-16 修回日期:2012-05-16 出版日期:2012-11-01 发布日期:2012-11-01
  • 基金资助:
    Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0052) and the Fundamental Research Funds for the Central Universities of China (Grant No. HEUCFT1008).

Junction barrier Schottky rectifier with improved P-well region

Wang Ying (王颖), Li Ting (李婷), Cao Fei (曹菲), Shao Lei (邵雷), Chen Yu-Xian (陈宇贤)   

  1. College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China
  • Received:2012-03-16 Revised:2012-05-16 Online:2012-11-01 Published:2012-11-01
  • Contact: Wang Ying E-mail:wangying7711@yahoo.com
  • Supported by:
    Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0052) and the Fundamental Research Funds for the Central Universities of China (Grant No. HEUCFT1008).

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摘要： A junction barrier Schottky (JBS) rectifier with improved P-well on 4H-SiC is proposed to improve the VF-IR trade-off and the breakdown voltage. The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3×10-8 times that of the common JBS rectifier at no expense of the forward voltage drop. It is because that the depletion layer thickness in P-well region at the same reverse voltage is larger than in P+ grid, resulting in the lower spreading current and tunneling current. As a result, the breakdown voltage of the proposed JBS rectifier is over 1.6 kV that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field. Although the series resistance of the proposed JBS rectifier is a little larger than that of common JBS rectifier, the figure of merit (FOM) of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier. Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge (ESD) in the human body model (HBM) circuits, the failure energy of the proposed JBS rectifier increases 17% compared with that of the common JBS rectifier.

关键词: Schottky rectifier, breakdown voltage, forward voltage drop, reverse current density

Abstract: A junction barrier Schottky (JBS) rectifier with improved P-well on 4H-SiC is proposed to improve the VF-IR trade-off and the breakdown voltage. The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3×10-8 times that of the common JBS rectifier at no expense of the forward voltage drop. It is because that the depletion layer thickness in P-well region at the same reverse voltage is larger than in P+ grid, resulting in the lower spreading current and tunneling current. As a result, the breakdown voltage of the proposed JBS rectifier is over 1.6 kV that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field. Although the series resistance of the proposed JBS rectifier is a little larger than that of common JBS rectifier, the figure of merit (FOM) of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier. Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge (ESD) in the human body model (HBM) circuits, the failure energy of the proposed JBS rectifier increases 17% compared with that of the common JBS rectifier.

Key words: Schottky rectifier, breakdown voltage, forward voltage drop, reverse current density

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)