A–188 V 7.2 Ω·mm2, P-channel high voltage device formed on an epitaxy-SIMOX substrate

doi:10.1088/1674-1056/20/8/087101

中国物理B ›› 2011, Vol. 20 ›› Issue (8): 87101-087101.doi: 10.1088/1674-1056/20/8/087101

A–188 V 7.2 Ω·mm², P-channel high voltage device formed on an epitaxy-SIMOX substrate

胡盛东¹, 张波², 罗小蓉², 李肇基², 吴丽娟³

(1)College of Communication Engineering, Chongqing University, Chongqing 400044, China vspace2mm; (2)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; (3)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, Chin

收稿日期:2010-12-09 修回日期:2011-01-10 出版日期:2011-08-15 发布日期:2011-08-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060), the Fund of the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904), and the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721).

A–188 V 7.2 Ω·mm², P-channel high voltage device formed on an epitaxy-SIMOX substrate

Wu Li-Juan(吴丽娟)^a)b)^†, Hu Sheng-Dong(胡盛东)^c), Zhang Bo(张波)^a), Luo Xiao-Rong(罗小蓉)^a), and Li Zhao-Ji(李肇基)^a)

^a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; ^b College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, China; ^c College of Communication Engineering, Chongqing University, Chongqing 400044, China

Received:2010-12-09 Revised:2011-01-10 Online:2011-08-15 Published:2011-08-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060), the Fund of the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904), and the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721).

摘要/Abstract

摘要： This paper proposes a new n⁺-charge island (NCI) P-channel lateral double diffused metal—oxide semiconductor (LDMOS) based on silicon epitaxial separation by implantation oxygen (E-SIMOX) substrate. Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n⁺ -regions on the interface of a buried oxide layer, and therefore the electric field of a dielectric buried layer (E_I) is enhanced by these holes effectively, leading to an improved breakdown voltage (BV). The V_B and E_I of the NCI P-channel LDMOS increase to —188 V and 502.3 V/μm from -75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer, respectively. The influences of structure parameters on the proposed device characteristics are investigated by simulation. Moreover, compared with the conventional device, the proposed device exhibits low special on-resistance.

关键词: dielectric buried layer, breakdown voltage, self-adapted holes, epitaxy-SIMOX

Abstract: This paper proposes a new n⁺-charge island (NCI) P-channel lateral double diffused metal—oxide semiconductor (LDMOS) based on silicon epitaxial separation by implantation oxygen (E-SIMOX) substrate. Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n⁺ -regions on the interface of a buried oxide layer, and therefore the electric field of a dielectric buried layer (E_I) is enhanced by these holes effectively, leading to an improved breakdown voltage (BV). The V_B and E_I of the NCI P-channel LDMOS increase to —188 V and 502.3 V/μm from -75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer, respectively. The influences of structure parameters on the proposed device characteristics are investigated by simulation. Moreover, compared with the conventional device, the proposed device exhibits low special on-resistance.

Key words: dielectric buried layer, breakdown voltage, self-adapted holes, epitaxy-SIMOX

中图分类号: (Theories and models of many-electron systems)

71.10.-w

73.20.-r (Electron states at surfaces and interfaces) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

吴丽娟, 胡盛东, 张波, 罗小蓉, 李肇基. A–188 V 7.2 Ω·mm², P-channel high voltage device formed on an epitaxy-SIMOX substrate[J]. 中国物理B, 2011, 20(8): 87101-087101.

Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), and Li Zhao-Ji(李肇基) . A–188 V 7.2 Ω·mm², P-channel high voltage device formed on an epitaxy-SIMOX substrate[J]. Chin. Phys. B, 2011, 20(8): 87101-087101.

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A–188 V 7.2 Ω·mm², P-channel high voltage device formed on an epitaxy-SIMOX substrate

A–188 V 7.2 Ω·mm², P-channel high voltage device formed on an epitaxy-SIMOX substrate

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