中国物理B ›› 2011, Vol. 20 ›› Issue (2): 27303-027303.doi: 10.1088/1674-1056/20/2/027303

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Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier

全思1, 杨丽媛1, 杨凌1, 王昊1, 张进成1, 郝跃1, 于惠游2, 潘才渊2, 马晓华3   

  1. (1)Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Physics Technology, Xidian University, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China; (3)School of Technical Physics, Xidian University, Xi'an 710071, China; Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Physics Technology, Xidian University, Xi'an 710071, China
  • 收稿日期:2010-08-14 修回日期:2010-10-09 出版日期:2011-02-15 发布日期:2011-02-15
  • 基金资助:
    Project supported by the Major Program and State Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033) and the National Key Science &

Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier

Ma Xiao-Hua(马晓华)a)b)†,Yu Hui-You(于惠游)a), Quan Si(全思)b), Yang Li-Yuan(杨丽媛) b), Pan Cai-Yuan(潘才渊)a), Yang Ling(杨凌)b), Wang Hao(王昊)b), Zhang Jin-Cheng(张进成)b),and Hao Yue(郝跃) b)   

  1. a School of Technical Physics, Xidian University, Xi'an 710071, China; b Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Physics Technology, Xidian University, Xi'an 710071, China
  • Received:2010-08-14 Revised:2010-10-09 Online:2011-02-15 Published:2011-02-15
  • Supported by:
    Project supported by the Major Program and State Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033) and the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002).

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摘要： An enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMTs) was fabricated with 15-nm AlGaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around --1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs (--3.5 V). Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-μ m gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/mm, respectively. Compared with the 22-nm barrier E-mode devices, VT of the thin barrier HEMTs is much more stable under the gate step-stress.

关键词: high electron mobility transistors, AlGaN/GaN, thin barrier, fluorine plasma treatment, threshold voltage

Abstract: An enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMTs) was fabricated with 15-nm AlGaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around -1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs (-3.5 V). Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-μm gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/mm, respectively. Compared with the 22-nm barrier E-mode devices, VT of the thin barrier HEMTs is much more stable under the gate step-stress.

Key words: high electron mobility transistors, AlGaN/GaN, thin barrier, fluorine plasma treatment, threshold voltage

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)