The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al2O3 as the gate dielectric

doi:10.1088/1674-1056/20/12/127204

中国物理B ›› 2011, Vol. 20 ›› Issue (12): 127204-127204.doi: 10.1088/1674-1056/20/12/127204

The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al₂O₃ as the gate dielectric

刘莉¹, 杨银堂¹, 马晓华²

(1)School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China

收稿日期:2011-03-28 修回日期:2011-10-12 出版日期:2011-12-15 发布日期:2011-12-15
基金资助:
Project supported by the 2010 School Fundamental Scientific Research Fund of Xidian University (Grant No. K50510250008).

The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al₂O₃ as the gate dielectric

Liu Li(刘莉)^a)c)†, Yang Yin-Tang(杨银堂)^a)c), and Ma Xiao-Hua(马晓华)^b)

^a School of Microelectronics, Xidian University, Xi'an 710071, China; ^b School of Technical Physics, Xidian University, Xi'an 710071, China; ^c Key Laboratory of Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China

Received:2011-03-28 Revised:2011-10-12 Online:2011-12-15 Published:2011-12-15
Supported by:
Project supported by the 2010 School Fundamental Scientific Research Fund of Xidian University (Grant No. K50510250008).

摘要/Abstract

摘要： A 4H-silicon carbide metal-insulator-semiconductor structure with ultra-thin Al₂O₃ as the gate dielectric, deposited by atomic layer deposition on the epitaxial layer of a 4H-SiC (0001) 8⁰N-/N+ substrate, has been fabricated. The experimental results indicate that the prepared ultra-thin Al₂O₃ gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25 MV/cm, excellent interface properties (1×10¹⁴ cm^-2) and low gate-leakage current (I_G = 1 × 10^-3 A/cm^-2@E_ox = 8 MV/cm). Analysis of the current conduction mechanism on the deposited Al₂O₃ gate dielectric was also systematically performed. The confirmed conduction mechanisms consisted of Fowler-Nordheim (FN) tunneling, the Frenkel-Poole mechanism, direct tunneling and Schottky emission, and the dominant current conduction mechanism depends on the applied electrical field. When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al₂O₃ is 1.4 eV, which can meet the requirements of silicon carbide metal-insulator-semiconductor transistor devices.

关键词: Al₂O₃, 4H-silicon carbide, metal-insulator-semiconductor capacitor, gate leakage current, C-V characteristics

Abstract: A 4H-silicon carbide metal-insulator-semiconductor structure with ultra-thin Al₂O₃ as the gate dielectric, deposited by atomic layer deposition on the epitaxial layer of a 4H-SiC (0001) 8⁰N-/N+ substrate, has been fabricated. The experimental results indicate that the prepared ultra-thin Al₂O₃ gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25 MV/cm, excellent interface properties (1×10¹⁴ cm^-2) and low gate-leakage current (I_G = 1 × 10^-3 A/cm^-2@E_ox = 8 MV/cm). Analysis of the current conduction mechanism on the deposited Al₂O₃ gate dielectric was also systematically performed. The confirmed conduction mechanisms consisted of Fowler-Nordheim (FN) tunneling, the Frenkel-Poole mechanism, direct tunneling and Schottky emission, and the dominant current conduction mechanism depends on the applied electrical field. When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al₂O₃ is 1.4 eV, which can meet the requirements of silicon carbide metal-insulator-semiconductor transistor devices.

Key words: Al₂O₃, 4H-silicon carbide, metal-insulator-semiconductor capacitor, gate leakage current, C-V characteristics

中图分类号: (Insulators)

72.80.Sk

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

刘莉, 杨银堂, 马晓华. The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al₂O₃ as the gate dielectric[J]. 中国物理B, 2011, 20(12): 127204-127204.

Liu Li(刘莉), Yang Yin-Tang(杨银堂), and Ma Xiao-Hua(马晓华) . The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al₂O₃ as the gate dielectric[J]. Chin. Phys. B, 2011, 20(12): 127204-127204.

参考文献 19

[1]	De'ak P, Knaup J M, Hornos T, Christoph T, Adam G and Thomas F 2007 J. Phys. D: Appl. Phys. 40 6242
[2]	Dang H L and Gudipati 2009 J. Comput. Theor. Nanosci. 6 1305
[3]	Puthenkovilakam R and Chang J P 2004 J. Appl. Phys. 96 2701
[4]	Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D and Hao Y 2009 Acta Phys. Sin. 58 536 (in Chinese)
[5]	Perez-Tomas A, Godignon P and Montserrat J 2006 Appl. Surf. Sci. 253 1741
[6]	Mahapatra R, Chakraborty A K and Poollamai N 2007 J. Vac. Sci. Technol. B 25 217
[7]	Fissel A, Czernohorsky M and Osten H J 2006 J. Vac. Sci. Technol. B 24 2115
[8]	Afanasév V V, Stesmans A and Chen F 2003 Appl. Phys. Lett. 82 922
[9]	Wolborski M, Rosen D and Hallen A 2006 Thin Solid Films 515 456
[10]	Lipkin L A and Palmour J W 1999 IEEE Trans. ED. 46 525
[11]	Xu M, Zhang W and Sun Q Q 2006 The 6th National Surface Engineering Academic Conference 8 474 (in Chinese)
[12]	Sze S M and Kwok K NG 2006 Physics of Semiconductor Devices 3rd edn. (New York: Wiley-Interscience) p. 158
[13]	Zhang W D, Govoreanu B, Zheng X F and Ruiz D Aguado 2008 IEEE Electron Dev. Lett. 29 1043
[14]	Ouisse T, Bécourt N and Jaussaud C 1994 J. Appl. Phys. 75 604
[15]	Khairurrijal and Mizubayashi W 2000 Appl. Phys. Lett. 77 3580
[16]	Register L F, Rosenbaum E and Yang K 1999 Appl. Phys. Lett. 74 457
[17]	Wu Y 2010 Analysis and Modeling of Gate Leakage Current of MOS Devices with High-k Gate Dielectric Master Thesis, Xidian University p. 25 (in Chinese)
[18]	Jones M N, Kwon Y W and Norton D P 2005 Appl. Phys. A 81 285
[19]	Lin Y J 2010 Synthetic Metals 160 2628

The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al₂O₃ as the gate dielectric

The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al₂O₃ as the gate dielectric

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