中国物理B ›› 2018, Vol. 27 ›› Issue (9): 97309-097309.doi: 10.1088/1674-1056/27/9/097309
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Sheng Zhang(张昇), Ke Wei(魏珂), Yang Xiao(肖洋), Xiao-Hua Ma(马晓华), Yi-Chuan Zhang(张一川), Guo-Guo Liu(刘果果), Tian-Min Lei(雷天民), Ying-Kui Zheng(郑英奎), Sen Huang(黄森), Ning Wang(汪宁), Muhammad Asif, Xin-Yu Liu(刘新宇)
Sheng Zhang(张昇)1,2, Ke Wei(魏珂)2, Yang Xiao(肖洋)1, Xiao-Hua Ma(马晓华)1, Yi-Chuan Zhang(张一川)2, Guo-Guo Liu(刘果果)2, Tian-Min Lei(雷天民)1, Ying-Kui Zheng(郑英奎)2, Sen Huang(黄森)2, Ning Wang(汪宁)2, Muhammad Asif2, Xin-Yu Liu(刘新宇)2
摘要:
This paper concentrates on the impact of SiN passivation layer deposited by plasma-enhanced chemical vapor deposition (PECVD) on the Schottky characteristics in GaN high electron mobility transistors (HEMTs). Three types of SiN layers with different deposition conditions were deposited on GaN HEMTs. Atomic force microscope (AFM), capacitance-voltage (C-V), and Fourier transform infrared (FTIR) measurement were used to analyze the surface morphology, the electrical characterization, and the chemical bonding of SiN thin films, respectively. The better surface morphology was achieved from the device with lower gate leakage current. The fixed positive charge Qf was extracted from C-V curves of Al/SiN/Si structures and quite different density of trap states (in the order of magnitude of 1011-1012 cm-2) was observed. It was found that the least trap states were in accordance with the lowest gate leakage current. Furthermore, the chemical bonds and the %H in Si-H and N-H were figured from FTIR measurement, demonstrating an increase in the density of Qf with the increasing %H in N-H. It reveals that the effect of SiN passivation can be improved in GaN-based HEMTs by modulating %H in Si-H and N-H, thus achieving a better Schottky characteristics.
中图分类号: (III-V semiconductors)