中国物理B ›› 2010, Vol. 19 ›› Issue (12): 127303-127303.doi: 10.1088/1674-1056/19/12/127303

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Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET

刘红侠, 李斌, 李劲, 袁博, 郝跃   

  1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2010-02-26 修回日期:2010-06-02 出版日期:2010-12-15 发布日期:2010-12-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and Fundamental Research Funds for the Central Universities (Grant No. 200807010010).

Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET

Liu Hong-Xia(刘红侠)†, Li Bin(李斌), Li Jin(李劲), Yuan Bo(袁博), and Hao Yue(郝跃)   

  1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2010-02-26 Revised:2010-06-02 Online:2010-12-15 Published:2010-12-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and Fundamental Research Funds for the Central Universities (Grant No. 200807010010).

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摘要： This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated on silicon-on-aluminum nitride (SOAN) substrate. This novel structure is named SGSOAN nMOSFET. A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures.

Abstract: This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated on silicon-on-aluminum nitride (SOAN) substrate. This novel structure is named SGSOAN nMOSFET. A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures.

Key words: electrical characteristics, self-heating effect, SiGe-on insulator, SiGe-silicon-on-aluminum nitride

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
85.30.Tv (Field effect devices)