Performance comparison of Pt/Au and Ni/Au Schottky contacts on AlxGa1-x N/GaN heterostructures at high temperatures

doi:10.1088/1674-1056/19/12/127304

中国物理B ›› 2010, Vol. 19 ›› Issue (12): 127304-127304.doi: 10.1088/1674-1056/19/12/127304

Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al_xGa_1-x N/GaN heterostructures at high temperatures

刘新宇¹, 魏珂¹, 黄俊¹, 林芳², 沈波², 卢励吾², 马楠², 许福军², 苗振林², 宋杰²

(1)Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (2)State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

收稿日期:2010-06-18 修回日期:2010-06-29 出版日期:2010-12-15 发布日期:2010-12-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60906041, 10774001, 60736033, and 60890193) and the National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607).

Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al_xGa_1-x N/GaN heterostructures at high temperatures

Lin Fang(林芳)^a), Shen Bo(沈波)^a)^†,Lu Li-Wu(卢励吾)^a), Ma Nan(马楠)^a), Xu Fu-Jun(许福军)^a), Miao Zhen-Lin(苗振林)^a), Song Jie(宋杰)^a), Liu Xin-Yu(刘新宇)^b), Wei Ke(魏珂)^b), and Huang Jun(黄俊)^b)

^a State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China; ^b Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2010-06-18 Revised:2010-06-29 Online:2010-12-15 Published:2010-12-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60906041, 10774001, 60736033, and 60890193) and the National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607).

摘要/Abstract

摘要： In contrast with Au/Ni/Al_0.25Ga_0.75N/GaN Schottky contacts, this paper systematically investigates the effect of thermal annealing of Au/Pt/Al_0.25Ga_0.75N/GaN structures on electrical properties of the two-dimensional electron gas in Al_0.25Ga_0.75N/GaN heterostructures by means of temperature-dependent Hall and temperature-dependent current–voltage measurements. The two-dimensional electron gas density of the samples with Pt cap layer increases after annealing in N₂ ambience at 600 du while the annealing treatment has little effect on the two-dimensional electron gas mobility in comparison with the samples with Ni cap layer. The experimental results indicate that the Au/Pt/Al_0.25Ga_0.75N/GaN Schottky contacts reduce the reverse leakage current density at high annealing temperatures of 400–600 du. As a conclusion, the better thermal stability of the Au/Pt/Al_0.25Ga_0.75N/GaN Schottky contacts than the Au/Ni/Al_0.25Ga_0.75N/GaN Schottky contacts at high temperatures can be attributed to the inertness of the interface between Pt and Al_xGa_1-xN.

Abstract: In contrast with Au/Ni/Al_0.25Ga_0.75N/GaN Schottky contacts, this paper systematically investigates the effect of thermal annealing of Au/Pt/Al_0.25Ga_0.75N/GaN structures on electrical properties of the two-dimensional electron gas in Al_0.25Ga_0.75N/GaN heterostructures by means of temperature-dependent Hall and temperature-dependent current–voltage measurements. The two-dimensional electron gas density of the samples with Pt cap layer increases after annealing in N₂ ambience at 600 $^\circ$C while the annealing treatment has little effect on the two-dimensional electron gas mobility in comparison with the samples with Ni cap layer. The experimental results indicate that the Au/Pt/Al_0.25Ga_0.75N/GaN Schottky contacts reduce the reverse leakage current density at high annealing temperatures of 400–600 $^\circ$C. As a conclusion, the better thermal stability of the Au/Pt/Al_0.25Ga_0.75N/GaN Schottky contacts than the Au/Ni/Al_0.25Ga_0.75N/GaN Schottky contacts at high temperatures can be attributed to the inertness of the interface between Pt and Al_xGa_1-xN.

Key words: gate leakage current, high temperature, Frenkel–Poole emission

中图分类号: (Surface double layers, Schottky barriers, and work functions)

73.30.+y

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

林芳, 沈波, 卢励吾, 马楠, 许福军, 苗振林, 宋杰, 刘新宇, 魏珂, 黄俊. Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al_xGa_1-x N/GaN heterostructures at high temperatures[J]. 中国物理B, 2010, 19(12): 127304-127304.

Lin Fang(林芳), Shen Bo(沈波),Lu Li-Wu(卢励吾), Ma Nan(马楠), Xu Fu-Jun(许福军), Miao Zhen-Lin(苗振林), Song Jie(宋杰), Liu Xin-Yu(刘新宇), Wei Ke(魏珂), and Huang Jun(黄俊). Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al_xGa_1-x N/GaN heterostructures at high temperatures[J]. Chin. Phys. B, 2010, 19(12): 127304-127304.

参考文献 16

[1]	Lin Z J, Kim H, Lee J and Lu W 2004 Appl. Phys. Lett. 84 1585
[2]	Liu F, Wang T, Shen B, Huang S, Lin F, Ma N, Xu F J, Wang P and Yao J Q 2009 Chin. Phys. B 18 1614
[3]	Miura N, Nanjo T, Suita M, Oishi T, Abe Y, Ozeki T, Ishikawa H, Egawa T and Jimbo T 2004 Solid-State Electron. 48 689
[4]	Preble E A, Tracy K M, Kiesel S, McLean H, Miraglia P Q, Nemanich R J, Davis R F, Albrecht M and Smith D J 2002 J. Appl. Phys. 91 2133
[5]	Liu F, Wang T, Shen B, Huang S, Lin F, Ma N, Xu F J, Wang P and Yao J Q 2009 Chin. Phys. B 18 1618
[6]	Huang S, Shen B, Lin F, Ma N, Xu F J, Miao Z L, Song J, Lu L, Liu F, Wang Y, Qin Z X, Yang Z J and Zhang G Y 2008 Appl. Phys. Lett. 93 172102
[7]	Kim M H, Lee S N, Huh C, Park S Y, Han J Y, Seo J M and Park S J 2000 Phys. Rev. B 61 10966
[8]	Yu E T, Sullivan G J, Asbeck P M, Wang C D, Qiao D and Lau S S 1997 Appl. Phys. Lett. 71 2794
[9]	Mohney S E and Lin X 1996 J. Electron. Mater. 25 811
[10]	Gasser S M, Kolawa E and Nicolet M A 1999 J. Vac. Sci. Technol. A 17 2642
[11]	Arulkumaran S, Egawa T, Ishikawa H, Umeno M and Jimbo Takashi 2001 IEEE Trans. Electron. Dev. 48 573
[12]	Hsu C Y, Lan W H and Wu Y C 2003 Appl. Phys. Lett. 83 2447
[13]	Zhao D G, Zhang S, Liu W B, Hao X P, Jiang D S, Zhu J J, Liu J S, Wang H, Zhang S M, Yang H and Wei L 2010 Chin. Phys. B 19 057802
[14]	Markovski S L, Pleumeekers M C L P, Kodentsov A A and van Loo F J J 1998 J. Alloy. Compd. 268 188
[15]	Zhang H, Miller E J and Yu E T 2006 J. Appl. Phys. 99 023703
[16]	Arulkumaran S, Egawa T, Ishikawa H and Jimbo T 2003 Appl. Phys. Lett. 82 3110

Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al_xGa_1-x N/GaN heterostructures at high temperatures

Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al_xGa_1-x N/GaN heterostructures at high temperatures

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 16

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Wang Lin(林旺), Ting-Ting Wang(王婷婷), Qi-Liang Wang(王启亮), Xian-Yi Lv(吕宪义), Gen-Zhuang Li(李根壮), Liu-An Li(李柳暗), Jin-Ping Ao(敖金平), and Guang-Tian Zou(邹广田). Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga₂O₃/p-diamond heterojunction[J]. 中国物理B, 2022, 31(10): 108105-108105.
[2]	Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉). Modulation of Schottky barrier in XSi₂N₄/graphene (X=Mo and W) heterojunctions by biaxial strain[J]. 中国物理B, 2022, 31(8): 87101-087101.
[3]	Haitao Zhou(周海涛), Lujia Cong(丛璐佳), Jiangang Ma(马剑钢), Bingsheng Li(李炳生), Haiyang Xu(徐海洋), and Yichun Liu(刘益春). Suppression of persistent photoconductivity in high gain Ga₂O₃ Schottky photodetectors[J]. 中国物理B, 2021, 30(12): 126104-126104.
[4]	Ji-Yao Du(都继瑶), Ji-Yu Zhou(周继禹), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Xin-Zhi Liu(刘新智), and Jin-Ping Ao(敖金平). Band alignment between NiO_x and nonpolar/semipolar GaN planes for selective-area-doped termination structure[J]. 中国物理B, 2021, 30(6): 67701-067701.
[5]	Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Design and simulation of AlN-based vertical Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67305-067305.
[6]	Chang Sun(孙畅), Xin-Yu Cao(曹新宇), Xi-Hui Wang(王西惠), Xiao-Le Qiu(邱潇乐), Zheng-Hui Fang(方铮辉), Yu-Jie Yuan(袁宇杰), Kai Liu(刘凯), and Xiao Zhang(张晓). Investigation of electronic, elastic, and optical properties of topological electride Ca₃Pb via first-principles calculations[J]. 中国物理B, 2021, 30(5): 57104-057104.
[7]	Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga₂O₃ thin film[J]. 中国物理B, 2021, 30(5): 57301-057301.
[8]	. [J]. 中国物理B, 2021, 30(3): 37303-.
[9]	. [J]. 中国物理B, 2021, 30(1): 17302-.
[10]	Brahim Ait Ali, Reda Moubah, Abdelkader Boulezhar, Hassan Lassri. Temperature-dependent barrier height inhomogeneities in PTB7:PC₇₁BM-based organic solar cells[J]. 中国物理B, 2020, 29(9): 98801-098801.
[11]	王伟凡, 王建峰, 张育民, 李腾坤, 熊瑞, 徐科. Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination[J]. 中国物理B, 2020, 29(4): 47305-047305.
[12]	杨超, 梁红伟, 张振中, 夏晓川, 张贺秋, 申人升, 骆英民, 杜国同. Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃[J]. 中国物理B, 2019, 28(4): 48502-048502.
[13]	李金岚, 李赟, 汪玲, 徐跃, 闫锋, 韩平, 纪小丽. Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode[J]. 中国物理B, 2019, 28(2): 27303-027303.
[14]	杜莹莹, 林德渠, 陈光华, 白新源, 汪隆喜, 吴蕊, 王嘉鸥, 钱海杰, 李宏年. Electronic states and molecular orientation of ITIC film[J]. 中国物理B, 2018, 27(8): 88801-088801.
[15]	仲雪倩, 王珏, 王宝柱, 王珩宇, 郭清, 盛况. Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes[J]. 中国物理B, 2018, 27(8): 87102-087102.