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Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃). A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications[J]. 中国物理B, 2022, 31(11): 117105-117105. |
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Zi-Heng Wang(王自衡), Yi-Jun Zhang(张益军), Shi-Man Li(李诗曼), Shan Li(李姗), Jing-Jing Zhan(詹晶晶), Yun-Sheng Qian(钱芸生), Feng Shi(石峰), Hong-Chang Cheng(程宏昌), Gang-Cheng Jiao(焦岗成), and Yu-Gang Zeng(曾玉刚). Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation[J]. 中国物理B, 2022, 31(9): 98505-098505. |
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Qiu-Ling Qiu(丘秋凌), Shi-Xu Yang(杨世旭), Qian-Shu Wu(吴千树), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Jin-Wei Zhang(张津玮), Zhen-Xing Liu(刘振兴), Yuan-Tao Zhang(张源涛), and Yang Liu(刘扬). Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction[J]. 中国物理B, 2022, 31(4): 47103-047103. |
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Pengfei Wang(王鹏飞), Minhan Mi(宓珉瀚), Meng Zhang(张濛), Jiejie Zhu(祝杰杰), Yuwei Zhou(周雨威), Jielong Liu(刘捷龙), Sijia Liu(刘思佳), Ling Yang(杨凌), Bin Hou(侯斌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications[J]. 中国物理B, 2022, 31(2): 27103-027103. |
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Huihui He(何慧卉) and Shenyuan Yang(杨身园). First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlattices[J]. 中国物理B, 2022, 31(1): 17104-017104. |
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Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞). Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors[J]. 中国物理B, 2021, 30(10): 108502-108502. |
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Jing-Cheng Wang(王旌丞), Hao Chen(陈浩), Lin-Feng Wan(万琳丰), Cao-Yuan Mu(牟草源), Yao-Feng Liu(刘尧峰), Shao-Heng Cheng(成绍恒), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Hong-Dong Li(李红东). Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains[J]. 中国物理B, 2021, 30(9): 96803-096803. |
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Sheng Wu(武盛), Minhan Mi(宓珉瀚), Xiaohua Ma(马晓华), Ling Yang(杨凌), Bin Hou(侯斌), and Yue Hao(郝跃). High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz[J]. 中国物理B, 2021, 30(8): 87102-087102. |
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余丁, 沈桂英, 谢辉, 刘京明, 孙静, 赵有文. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal[J]. 中国物理B, 2019, 28(5): 57102-057102. |
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李阳锋, 江洋, 迭俊珲, 王彩玮, 严珅, 吴海燕, 马紫光, 王禄, 贾海强, 王文新, 陈弘. Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction[J]. 中国物理B, 2018, 27(9): 97104-097104. |
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马淑芳, 屈媛, 班士良. Intersubband optical absorption of electrons in double parabolic quantum wells of AlxGa1-xAs/AlyGa1-yAs[J]. 中国物理B, 2018, 27(2): 27103-027103. |
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郑卫民, 丛伟艳, 李素梅, 王爱芳, 李斌, 黄海北. Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells[J]. 中国物理B, 2018, 27(1): 17302-017302. |