中国物理B ›› 1996, Vol. 5 ›› Issue (1): 1-9.doi: 10.1088/1004-423X/5/1/001

• •    下一篇

DETERMINATION OF CAPTURE BARRIERS OF DEFECTS FOR GaAs ALLOYS AND TRANSIENT PHOTO-RESISTIVITY SPECTROSCOPY

王海龙1, 杨锡震1, 封松林2, 周洁2   

  1. (1)Department of Physics, Beijing Normal University, Beijing 100875, China; (2)State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijirg 100083, China
  • 收稿日期:1995-01-27 出版日期:1996-01-20 发布日期:1996-01-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

DETERMINATION OF CAPTURE BARRIERS OF DEFECTS FOR GaAs ALLOYS AND TRANSIENT PHOTO-RESISTIVITY SPECTROSCOPY

WANG HAI-LONG (王海龙)a, FENG SONG-LIN (封松林), ZHOU JIE (周洁), YANG XI-ZHEN (杨锡震)a   

  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijirg 100083, China; a Department of Physics, Beijing Normal University, Beijing 100875, China
  • Received:1995-01-27 Online:1996-01-20 Published:1996-01-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： Si-doped Ga0.7Al0.3As grown by molecular beam epitaxy (MBE) and undoped Ga0.47Al0.53As grown by chemical beam epitaxy (CBE) have been investigated using a new deep level characterization method-transient photo-resistivity spectroscopy, which we recently developed. This method measures directly the capture process of deep centers. In GaAlAs, apparent capture barrier energy EB= 0.25eV of DX center was determined and intrinasic capture barrier energy Eσ = 0.16eV was directly measured. In GaInAs, a defect with capture barier energy EB= 0.2BeV was observed. The result proved that DX centers capture electron only from band L, belonging to small lattice relaxation model. The theoretical deduction of transient photo-resistivity spectroscopy was improved.

Abstract: Si-doped Ga0.7Al0.3As grown by molecular beam epitaxy (MBE) and undoped Ga0.47Al0.53As grown by chemical beam epitaxy (CBE) have been investigated using a new deep level characterization method-transient photo-resistivity spectroscopy, which we recently developed. This method measures directly the capture process of deep centers. In GaAlAs, apparent capture barrier energy EB= 0.25eV of DX center was determined and intrinasic capture barrier energy E$\sigma$ = 0.16eV was directly measured. In GaInAs, a defect with capture barier energy EB= 0.2BeV was observed. The result proved that DX centers capture electron only from band L, belonging to small lattice relaxation model. The theoretical deduction of transient photo-resistivity spectroscopy was improved.

中图分类号:  (III-V semiconductors)

  • 71.55.Eq
81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)