中国物理B ›› 1994, Vol. 3 ›› Issue (3): 176-181.doi: 10.1088/1004-423X/3/3/003

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INFLUENCE OF γ-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION

张道范, 朱镛, 杨华光, 马文漪, 顾本源   

  1. Institute of Physics, Academia Sinica, Beijing 100080, China
  • 收稿日期:1993-08-12 出版日期:1994-03-20 发布日期:1994-03-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

INFLUENCE OF $\gamma$-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION

ZHANG DAO-FAN (张道范), ZHU YONG (朱镛), YANG HUA-GUANG (杨华光), MA WEN-YI (马文漪), GU BEN-YUAN (顾本源)   

  1. Institute of Physics, Academia Sinica, Beijing 100080, China
  • Received:1993-08-12 Online:1994-03-20 Published:1994-03-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： In this paper the influence of γ-radiation on the dielectric constants of Rb2ZnCl4 crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with γ-radiation or not. For the γ-irradiated sample, its transition point, Tc, between the INC and C phases is not changed, but the peak value of the dielectric constant at Tc increases abruptly, compared with that before γ-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from γ-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples.

Abstract: In this paper the influence of $\gamma$-radiation on the dielectric constants of Rb2ZnCl4 crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with $\gamma$-radiation or not. For the $\gamma$-irradiated sample, its transition point, Tc, between the INC and C phases is not changed, but the peak value of the dielectric constant at Tc increases abruptly, compared with that before $\gamma$-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from $\gamma$-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples.

中图分类号:  (γ-ray effects)

  • 61.80.Ed
64.70.Rh (Commensurate-incommensurate transitions) 77.22.Ch (Permittivity (dielectric function)) 81.40.Gh (Other heat and thermomechanical treatments) 77.80.Dj (Domain structure; hysteresis)