中国物理B ›› 2016, Vol. 25 ›› Issue (4): 46104-046104.doi: 10.1088/1674-1056/25/4/046104

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates

Qi-Feng Zhao(赵启凤), Yi-Qi Zhuang(庄奕琪), Jun-Lin Bao(包军林), Wei Hu(胡为)   

  1. 1 School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China
  • 收稿日期:2015-06-28 修回日期:2015-12-27 出版日期:2016-04-05 发布日期:2016-04-05
  • 通讯作者: Jun-Lin Bao E-mail:baoing@126.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076101 and 61204092 ).

Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates

Qi-Feng Zhao(赵启凤)1, Yi-Qi Zhuang(庄奕琪)1, Jun-Lin Bao(包军林)1, Wei Hu(胡为)2   

  1. 1 School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China
  • Received:2015-06-28 Revised:2015-12-27 Online:2016-04-05 Published:2016-04-05
  • Contact: Jun-Lin Bao E-mail:baoing@126.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076101 and 61204092 ).

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摘要： It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the emitter-base junction is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contributions to the recombination current at the surface of the space charge region. Based on the theory of carrier number fluctuation and the model of surface recombination current, a 1/f noise model is developed. This model suggests that 1/f noise degradations are the result of the accumulation of oxide-trapped charges and interface states. Combining models of ELDRS, this model can explain the reason why the 1/f noise degradation is more severe at a low dose rate than at a high dose rate. The radiations were performed in a Co60 source up to a total dose of 700 Gy(Si). The low dose rate was 0.001 Gy(Si)/s and the high dose rate was 0.1 Gy(Si)/s. The model accords well with the experimental results.

关键词: radiation, 1/f noise, bipolar junction transistors

Abstract: It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the emitter-base junction is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contributions to the recombination current at the surface of the space charge region. Based on the theory of carrier number fluctuation and the model of surface recombination current, a 1/f noise model is developed. This model suggests that 1/f noise degradations are the result of the accumulation of oxide-trapped charges and interface states. Combining models of ELDRS, this model can explain the reason why the 1/f noise degradation is more severe at a low dose rate than at a high dose rate. The radiations were performed in a Co60 source up to a total dose of 700 Gy(Si). The low dose rate was 0.001 Gy(Si)/s and the high dose rate was 0.1 Gy(Si)/s. The model accords well with the experimental results.

Key words: radiation, 1/f noise, bipolar junction transistors

中图分类号:  (Physical radiation effects, radiation damage)

  • 61.80.-x
61.80.Ed (γ-ray effects) 85.40.Qx (Microcircuit quality, noise, performance, and failure analysis)