Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

doi:10.1088/1674-1056/26/9/098505

中国物理B ›› 2017, Vol. 26 ›› Issue (9): 98505-098505.doi: 10.1088/1674-1056/26/9/098505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

Wei-Wei Yan(闫薇薇), Lin-Chun Gao(高林春), Xiao-Jing Li(李晓静), Fa-Zhan Zhao(赵发展), Chuan-Bin Zeng(曾传滨), Jia-Jun Luo(罗家俊), Zheng-Sheng Han(韩郑生)

1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2017-04-17 修回日期:2017-05-15 出版日期:2017-09-05 发布日期:2017-09-05
通讯作者: Chuan-Bin Zeng E-mail:chbzeng@ime.ac.cn
基金资助:
Project supported by Funds of Key Laboratory, China (Grant No. y7ys011001) and Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. y5yq01r002).

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

Wei-Wei Yan(闫薇薇)^1,2, Lin-Chun Gao(高林春)^1,2, Xiao-Jing Li(李晓静)^1,2, Fa-Zhan Zhao(赵发展)^1,2, Chuan-Bin Zeng(曾传滨)^1,2, Jia-Jun Luo(罗家俊)^1,2, Zheng-Sheng Han(韩郑生)^1,2

1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029, China

Received:2017-04-17 Revised:2017-05-15 Online:2017-09-05 Published:2017-09-05
Contact: Chuan-Bin Zeng E-mail:chbzeng@ime.ac.cn
Supported by:
Project supported by Funds of Key Laboratory, China (Grant No. y7ys011001) and Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. y5yq01r002).

摘要/Abstract

摘要： In this study, we investigate the single-event transient (SET) characteristics of a partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor (p-BJT) effect by performing both a laser test and simulations.

关键词: single-event transient, pulsed laser, parasitic bipolar junction transistor, partially depleted silicon on insulator

Abstract: In this study, we investigate the single-event transient (SET) characteristics of a partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor (p-BJT) effect by performing both a laser test and simulations.

Key words: single-event transient, pulsed laser, parasitic bipolar junction transistor, partially depleted silicon on insulator

中图分类号: (Field effect devices)

85.30.Tv

94.05.Dd (Radiation processes) 61.80.Ed (γ-ray effects)

闫薇薇, 高林春, 李晓静, 赵发展, 曾传滨, 罗家俊, 韩郑生. Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET[J]. 中国物理B, 2017, 26(9): 98505-098505.

Wei-Wei Yan(闫薇薇), Lin-Chun Gao(高林春), Xiao-Jing Li(李晓静), Fa-Zhan Zhao(赵发展), Chuan-Bin Zeng(曾传滨), Jia-Jun Luo(罗家俊), Zheng-Sheng Han(韩郑生). Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET[J]. Chin. Phys. B, 2017, 26(9): 98505-098505.

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Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

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