中国物理B ›› 2022, Vol. 31 ›› Issue (8): 86106-086106.doi: 10.1088/1674-1056/ac5d32
Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors
Jianan Wei(魏佳男)1,2,†, Yang Li(李洋)2, Wenlong Liao(廖文龙)2, Fang Liu(刘方)2, Yonghong Li(李永宏)2, Jiancheng Liu(刘建成)3, Chaohui He(贺朝会)2, and Gang Guo(郭刚)3
- 1 Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;
2 School of Nuclear Science and technology, Xi'an Jiaotong University, Xi'an 710049, China;
3 National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 102413, China
Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors
Jianan Wei(魏佳男)1,2,†, Yang Li(李洋)2, Wenlong Liao(廖文龙)2, Fang Liu(刘方)2, Yonghong Li(李永宏)2, Jiancheng Liu(刘建成)3, Chaohui He(贺朝会)2, and Gang Guo(郭刚)3
- 1 Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;
2 School of Nuclear Science and technology, Xi'an Jiaotong University, Xi'an 710049, China;
3 National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 102413, China
摘要： We investigate the angular dependence of proton-induced single event transient (SET) in silicon-germanium heterojunction bipolar transistors. Experimental results show that the overall SET cross section is almost independent of proton incident angle. However, the proportion of SET events with long duration and high integral charge collection grows significantly with the increasing angle. Monte Carlo simulations demonstrate that the integral cross section of proton incident events with high ionizing energy deposition in the sensitive volume tends to be higher at larger incident angles, which is associated with the angular distribution of proton-induced secondary particles and the geometry of sensitive volume.
中图分类号: (γ-ray effects)
- 61.80.Ed