中国物理B ›› 1994, Vol. 3 ›› Issue (3): 182-189.doi: 10.1088/1004-423X/3/3/004

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MICROSTRUCTURE AND LUMINESCENCE PROPERTIES OF GaxIn1-xP/GaAs HETEROSTRUCTURE

张庶元, 李凡庆, 左健, 谭舜, 许存义, 陆斌, 陈志文   

  1. Laboratory of Structure Analysis, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:1993-03-24 出版日期:1994-03-20 发布日期:1994-03-20

MICROSTRUCTURE AND LUMINESCENCE PROPERTIES OF GaxIn1-xP/GaAs HETEROSTRUCTURE

ZHANG SHU-YUAN (张庶元), LI FAN-QING (李凡庆), ZUO JIAN (左健), TAN SHUN (谭舜), XU CUN-YI (许存义), LU BIN (陆斌), CHEN ZHI-WEN (陈志文)   

  1. Laboratory of Structure Analysis, University of Science and Technology of China, Hefei 230026, China
  • Received:1993-03-24 Online:1994-03-20 Published:1994-03-20

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摘要： The GaxIn1-xP/GaAs heterostructures with different x values have been investigated by photoluminescence (PL), energy dispersive spectrum (EDS), and transmission electron microscopy (TEM). Experimental results suggested that the composition of epitaxial layers evidently affected the microstructure of the heterostructures. When x value was close to 0.5, the defects in the epitaxial layer decreased, and the lattice match between film and sub-strate approached optimum, Meanwhile, the heteroatructure provided a high luminescence efficiency.

Abstract: The GaxIn1-xP/GaAs heterostructures with different x values have been investigated by photoluminescence (PL), energy dispersive spectrum (EDS), and transmission electron microscopy (TEM). Experimental results suggested that the composition of epitaxial layers evidently affected the microstructure of the heterostructures. When x value was close to 0.5, the defects in the epitaxial layer decreased, and the lattice match between film and sub-strate approached optimum, Meanwhile, the heteroatructure provided a high luminescence efficiency.

中图分类号:  (III-V semiconductors)

  • 78.66.Fd
78.55.Cr (III-V semiconductors) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)