[1] |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504. |
[2] |
Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩). Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing[J]. 中国物理B, 2022, 31(9): 98503-098503. |
[3] |
Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华). Introducing voids around the interlayer of AlN by high temperature annealing[J]. 中国物理B, 2022, 31(7): 76104-076104. |
[4] |
Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰). Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology[J]. 中国物理B, 2022, 31(5): 56106-056106. |
[5] |
Shao-Hua Yang(杨少华), Zhan-Gang Zhang(张战刚), Zhi-Feng Lei(雷志锋), Yun Huang(黄云), Kai Xi(习凯), Song-Lin Wang(王松林), Tian-Jiao Liang(梁天骄), Teng Tong(童腾), Xiao-Hui Li(李晓辉), Chao Peng(彭超), Fu-Gen Wu(吴福根), and Bin Li(李斌). Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs[J]. 中国物理B, 2022, 31(12): 126103-126103. |
[6] |
Ning Liu(刘宁), Li-Min Zhang(张利民), Xue-Ting Liu(刘雪婷), Shuo Zhang(张硕), Tie-Shan Wang(王铁山), and Hong-Xia Guo(郭红霞). Lattice damage in InGaN induced by swift heavy ion irradiation[J]. 中国物理B, 2022, 31(10): 106103-106103. |
[7] |
Jian Zhang(张健), Hao-Chun Zhang(张昊春), Zi-Liang Huang(黄子亮), Wen-Bo Sun(孙文博), and Yi-Yi Li(李依依). Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film[J]. 中国物理B, 2022, 31(1): 14402-014402. |
[8] |
Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing[J]. 中国物理B, 2021, 30(9): 97302-097302. |
[9] |
Yi-Peng Li(李奕鹏), Guang Ran(冉广), Xin-Yi Liu(刘歆翌), Xi Qiu(邱玺), Qing Han(韩晴), Wen-Jie Li(李文杰), and Yi-Jia Guo(郭熠佳). In-situ TEM observation of the evolution of helium bubbles in Mo during He+ irradiation and post-irradiation annealing[J]. 中国物理B, 2021, 30(8): 86109-086109. |
[10] |
Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇). Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors[J]. 中国物理B, 2021, 30(7): 77303-077303. |
[11] |
Qing Yu(余晴), Yi-Fei Zhang(张翼飞), Chang-Hao Zhao(赵昌昊), Kai-Yong He(何楷泳), Ru-Tian Huang(黄汝田), Yong-Cheng He(何永成), Xin-Yu Wu(吴歆宇), Jian-She Liu(刘建设), and Wei Chen(陈炜). Fabrication and characterization of Al-Mn superconducting films for applications in TES bolometers[J]. 中国物理B, 2021, 30(7): 77402-077402. |
[12] |
Qi-Xun Guo(郭奇勋), Zhong-Xu Ren(任中旭), Yi-Ya Huang(黄意雅), Zhi-Chao Zheng(郑志超), Xue-Min Wang(王学敏), Wei He(何为), Zhen-Dong Zhu(朱振东), and Jiao Teng(滕蛟). Effects of post-annealing on crystalline and transport properties of Bi2Te3 thin films[J]. 中国物理B, 2021, 30(6): 67307-067307. |
[13] |
Kun Qian(钱昆), Yu Li(李渝), Jingnan Song(宋静楠), Jazib Ali, Ming Zhang(张明), Lei Zhu(朱磊), Hong Ding(丁虹), Junzhe Zhan(詹俊哲), and Wei Feng(冯威). Understanding the synergistic effect of mixed solvent annealing on perovskite film formation[J]. 中国物理B, 2021, 30(6): 68103-068103. |
[14] |
Wen-Si Ai(艾文思), Jie Liu(刘杰), Qian Feng(冯倩), Peng-Fei Zhai(翟鹏飞), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Sheng-Xia Zhang(张胜霞), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Xiao-Yu Yan(闫晓宇), and You-Mei Sun(孙友梅). Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation[J]. 中国物理B, 2021, 30(5): 56110-056110. |
[15] |
Danqing Zhou(周丹晴), Dongyu Li(李东彧), Yuhan Chen(陈钰焓), Minjian Wu(吴旻剑), Tong Yang(杨童), Hao Cheng(程浩), Yuze Li(李昱泽), Yi Chen(陈艺), Yue Li(李越), Yixing Geng(耿易星), Yanying Zhao(赵研英), Chen Lin(林晨), Xueqing Yan(颜学庆), and Ziqiang Zhao(赵子强). Preparation of graphene on SiC by laser-accelerated pulsed ion beams[J]. 中国物理B, 2021, 30(11): 116106-116106. |