Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation

doi:10.1088/1674-1056/27/1/016103

中国物理B ›› 2018, Vol. 27 ›› Issue (1): 16103-016103.doi: 10.1088/1674-1056/27/1/016103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation

J Assaf

Atomic Energy Commission, Damascus, Syria

收稿日期:2017-08-09 修回日期:2017-09-26 出版日期:2018-01-05 发布日期:2018-01-05
通讯作者: J Assaf E-mail:pscientific12@aec.org.sy

Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation

J Assaf

Atomic Energy Commission, Damascus, Syria

Received:2017-08-09 Revised:2017-09-26 Online:2018-01-05 Published:2018-01-05
Contact: J Assaf E-mail:pscientific12@aec.org.sy

摘要/Abstract

摘要：

Two complementary types NPN and PNP of bipolar junction transistors (BJTs) were exposed to high dose of neutrons and gamma rays. The change in the base and collector currents, minority carriers lifetime, and current gain factor β with respect to the dose were analyzed. The contributions of the base current according to the defect types were also reported. It was declared that the radiation effect of neutrons was almost similar between the two transistor types, this effect at high dose may decrease the value of β to less than one. The Messenger-Spratt equation was used to describe the experimental results in this case. However, the experimental data demonstrated that the effect of gamma rays was generally higher on NPN than PNP transistors. This is mainly attributed to the difference in the behavior of the trapped positive charges in the SiO₂ layers. Meanwhile, this difference tends to be small for high gamma dose.

关键词: bipolar junction transistors, radiation effects, surface damage, bulk damage

Abstract:

Key words: bipolar junction transistors, radiation effects, surface damage, bulk damage

中图分类号: (Neutron radiation effects)

61.80.Hg

61.80.Ed (γ-ray effects) 61.82.Fk (Semiconductors) 81.40.Wx (Radiation treatment)

J Assaf. Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation[J]. 中国物理B, 2018, 27(1): 16103-016103.

J Assaf. Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation[J]. Chin. Phys. B, 2018, 27(1): 16103-016103.

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Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation

Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation

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