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Chin. Phys. B, 2017, Vol. 26(7): 078503    DOI: 10.1088/1674-1056/26/7/078503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

Muna E. Raypah, Mutharasu Devarajan, Fauziah Sulaiman
School of Physics, Universiti Sains Malaysia(USM), Penang 11800, Malaysia
Abstract  The relationship between the photometric, electric, and thermal parameters of light-emitting diodes (LEDs) is important for optimizing the LED illumination design. Indium gallium aluminium phosphide (InGaAlP)-based thin-film surface-mounted device (SMD) LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum (Al) packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster (thermal transient tester) and TeraLED (thermal and radiometric characterization of power LEDs) systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.
Keywords:  light-emitting diodes (LEDs)      surface-mounted device (SMD)      InGaAlP      luminous efficiency  
Received:  20 January 2017      Revised:  07 March 2017      Accepted manuscript online: 
PACS:  85.60.Jb (Light-emitting devices)  
  61.82.Fk (Semiconductors)  
  81.05.Ea (III-V semiconductors)  
  81.70.Pg (Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis)  
Corresponding Authors:  Muna E. Raypah     E-mail:  muna.ezzi@gmail.com,moni.ezzi@yahoo.com

Cite this article: 

Muna E. Raypah, Mutharasu Devarajan, Fauziah Sulaiman Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages 2017 Chin. Phys. B 26 078503

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