Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2016, Vol. 25 Issue (5): 058401    DOI: 10.1088/1674-1056/25/5/058401
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology
Ou-Peng Li(李欧鹏)1, Yong Zhang(张勇)1, Rui-Min Xu(徐锐敏)1, Wei Cheng(程伟)2, Yuan Wang(王元)2, Bing Niu(牛斌)2, Hai-Yan Lu(陆海燕)2
1. Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu 611731, China;
2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn