Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (6): 068401    DOI: 10.1088/1674-1056/23/6/068401
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Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier
Tian Xiao-Bo, Xu Hui
Embedded System and Solid-State Engineering Technology Center, School of Electronic Science and Engineering, National University of Defense and Technology, Changsha 410073, China

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