Mechanism of amorphous Ge2Sb2Te5  removal during chemical mechanical planarization in acidic H2O2 slurry

doi:10.1088/1674-1056/22/1/018503

Abstract In this paper, chemical mechanical planarization (CMP) of amorphous Ge₂Sb₂Te₅ (a-GST) in acidic H₂O₂ slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H₂O₂ concentration and gradually increases with the increase in H₂O₂ concentration, but static etch rate firstly increases and then slowly decreases with the increase in H₂O₂ concentration. To understand the chemical reaction behavior of H₂O₂ on the a-GST surface, potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H₂O₂. Finally, a possible removal mechanism of a-GST in different concentrations of H₂O₂ in the acidic slurry is described.

Keywords: H₂O₂ chemical mechanical planarization Ge₂Sb₂Te₅

Received: 03 May 2012
Revised: 27 June 2012
Accepted manuscript online:

PACS:	85.40.-e	(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
	81.65.-b	(Surface treatments)
	52.77.Bn	(Etching and cleaning)
	81.65.Cf	(Surface cleaning, etching, patterning)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004), the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003, 61006087, 61076121, 61176122, and 61106001), the Science and Technology Council of Shanghai, China (Grant Nos. 11DZ2261000 and 11QA1407800), and the Chinese Academy of Sciences (Grant No. 20110490761).

Corresponding Authors: Liu Bo
E-mail: liubo@mail.sim.ac.cn

Cite this article:

He Ao-Dong (何敖东), Song Zhi-Tang (宋志棠), Liu Bo (刘波), Zhong Min (钟旻), Wang Liang-Yong (王良咏), Lü Ye-Gang (吕业刚), Feng Song-Lin (封松林) Mechanism of amorphous Ge₂Sb₂Te₅ removal during chemical mechanical planarization in acidic H₂O₂ slurry 2013 Chin. Phys. B 22 018503

[1]	Wong H, Raoux S, Kim S B, Liang J, Reifenberg J P, Rajendran B, Asheghi M and Goodson K E 2010 Proc. IEEE 98 2201
[2]	Gokirmak A, Bakan G, Zhu Y, Lai C S, Lam C H and Silva H 2012 Thin Solid Films 520 2976
[3]	Zhang T, Song Z T, Liu B, Liu W L, Feng S L and Chen B 2007 Chin. Phys. 16 2475
[4]	Friedrich I, Weidenhof V, Njoroge W, Franz P and Wuttig M 2000 J. Appl. Phys. 87 4130
[5]	Carria E, Mio A M, Gibilisco S, Miritello M, Grimaldi M G and Rimini E 2011 Electrochem. Solid-State. Lett. 14 H124
[6]	Liu B, Song Z T, Zhang T, Feng S L and Gan F X 2004 Chin. Phys. 13 1167
[7]	Zhang K L, Liu Q B, Song Z T, Feng S L and Chen B 2006 Solid-State and Integrated Circuit Technology ICSICT 821
[8]	Yeung F, Ahn S J, Hwang Y N, Jeong C W, Song Y J, Lee S S, Lee S H, Ryoo K C, Park J H, Shin J M, Jeong W C, Kim Y T, Koh G H, Jeong G T, Jeong H S and Kim K 2005 Jpn. J. Appl. Phys. 44 2691
[9]	Liu Q B, Song Z T, Zhang K L, Wang L Y, Feng S L and Chen B 2006 Chin. Phys. Lett. 23 2296
[10]	Zhong M, Song Z T, Liu Bo, Feng S L and Chen B 2008 Chin. Phys. Lett. 25 762
[11]	Cho J Y, Cui H, Park J H, Yi S H, and Park J G 2010 Electrochem. Solid-State. Lett. 13 H155
[12]	Cui H, Cho J Y, Hwang H S, Lim J H, Park J H, Park H S, Hong K and Park J G 2010 J. Electrochem. Soc. 157 H1036
[13]	Zhong M, Song Z T, Liu B, Feng S L and Chen B J 2008 J. Electrochem. Soc. 155 H929
[14]	Cui H, Cho J Y, Park J H, Park H S and Park J G 2011 J. Electrochem. Soc. 158 H666
[15]	Cheng H Y, Jong C A, Lee C M and Chin T S 2005 IEEE Trans. Magn. 41 1031
[16]	Wang L Y, Liu B, Song Z T, Feng S L, Xiang Y H and Zhang F X 2010 J. Electrochem. Soc. 157 H470

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Mechanism of amorphous Ge2Sb2Te5 removal during chemical mechanical planarization in acidic H2O2 slurry

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Mechanism of amorphous Ge₂Sb₂Te₅ removal during chemical mechanical planarization in acidic H₂O₂ slurry