The p recombination layer in tunnel junctions for micromorph tandem solar cells

doi:10.1088/1674-1056/20/7/078402

Abstract A new tunnel recombination junction is fabricated for n—i—p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p⁺ recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n—i—p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 Ω·cm² by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage V_oc= 1.4 V, which is nearly the sum of the V_ocs of the two corresponding single cells, indicating no V_oc losses at the tunnel recombination junction.

Keywords: p recombination layer tunnel recombination junction micromorph tandem solar cells

Received: 07 January 2011
Revised: 10 March 2011
Accepted manuscript online:

PACS:	84.60.Jt	(Photoelectric conversion)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.40.-c	(Electronic transport in interface structures)

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Yao Wen-Jie(姚文杰), Zeng Xiang-Bo(曾湘波), Peng Wen-Bo(彭文博), Liu Shi-Yong(刘石勇), Xie Xiao-Bing(谢小兵), Wang Chao(王超), and Liao Xian-Bo(廖显伯) The p recombination layer in tunnel junctions for micromorph tandem solar cells 2011 Chin. Phys. B 20 078402

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[1]	The study of a new n/p tunnel recombination junction and its application in a-Si:H/$\mu$c-Si:H tandem solar cells Li Gui-Jun(李贵君), Hou Guo-Fu(侯国付), Han Xiao-Yan(韩晓艳), Yuan Yu-Jie(袁育洁), Wei Chang-Chun(魏长春), Sun Jian(孙建), Zhao Yin(赵颖), and Geng Xin-Hua(耿新华). Chin. Phys. B, 2009, 18(4): 1674-1678.

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