RADIATION-INDUCED DEFECTS IN RADIATION HARD AND SOFT OXIDES
LIU CHANG-SHI (刘昶时)a, MA ZHONG-QUAN (马忠权)a, ZHAO YUAN-FU (赵元富)b
a Xinjiang Institute of Physics, Academia Sinica, Urumqi 830011, China; b Lishan Institute of Microelectronics, Areo-Space Industry Ministry, Xi'an 710600, China
Abstract The point defects of Pb and E′ in radiation hard and soft Si-SiO2 samples were examined using electron spin resonance (ESR). The experimental results showed that these defects were correlated with the ways of oxidation process, the dosage of 60Co radiation and the radiation bias field. Besides, the $\Delta$H (peak of peak) of Pb and E′ indicated that Pb is the defect with slow electron spin relaxation time while E′ is the defect with fast electron spin relaxation time. Finally, the experimental results are explained qualitatively.
Received: 12 August 1993
Accepted manuscript online:
LIU CHANG-SHI (刘昶时), MA ZHONG-QUAN (马忠权), ZHAO YUAN-FU (赵元富) RADIATION-INDUCED DEFECTS IN RADIATION HARD AND SOFT OXIDES 1994 Acta Physica Sinica (Overseas Edition) 3 439
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